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DHE100N03B13 Spec and Replacement


   Type Designator: DHE100N03B13
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 325 nS
   Cossⓘ - Output Capacitance: 426 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO263

 DHE100N03B13 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DHE100N03B13 Specs

 ..1. Size:1507K  cn wxdh
 dh100n03b13 dhf100n03b13 dhi100n03b13 dhe100n03b13 dhb100n03b13 dhd100n03b13.pdf pdf_icon

DHE100N03B13

DH100N03B13/DHF100N03B13/DHI100N03B13/ DHE100N03B13/DHB100N03B13/DHD100N03B13 100A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 3.3m DS(on) (TYP) standard. 1 3 S I = 100A D 2 Featur... See More ⇒

 9.1. Size:1160K  cn wxdh
 dh10h037r dhf10h037r dhi10h037r dhe10h037r.pdf pdf_icon

DHE100N03B13

DH10H037R/DHF10H037R/ DHI10H037R/DHE10H037R 120A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power MOSFETS 2 D VDS = 100V Used advanced Splite Gate technology design, provided excellent RDSON and low gate charge. Which accords with RDS = 3.7m (on) (TYP) G the RoHS standard. 1 ID = 120A 3 S 2 Features Fast Switching Low ... See More ⇒

 9.2. Size:1098K  cn wxdh
 dh10h035r dhf10h035r dhi10h035r dhe10h035r.pdf pdf_icon

DHE100N03B13

DH10H035R/DHF10H035R/ DHI10H035R/DHE10H035R 120A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 3.5m DS(on) (TYP) G standard. 1 I = 120A 3 S D 2 Features Fast switching ... See More ⇒

Detailed specifications: DHD9Z24 , DHDSJ11N65 , DHDSJ13N65 , DHDSJ5N65 , DHDSJ7N65 , DHDZ24B31 , DHE029N08 , DHE035N04 , K2611 , DHE10H035R , DHE10H037R , DHE16N06 , DHE3205A , DHE3N90 , DHFSJ8N65 , DHFZ24B31 , DHI029N08 .

Keywords - DHE100N03B13 MOSFET specs

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