All MOSFET. DHE16N06 Datasheet

 

DHE16N06 Datasheet and Replacement


   Type Designator: DHE16N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 61 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 123 nS
   Cossⓘ - Output Capacitance: 607 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO263
 

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DHE16N06 Datasheet (PDF)

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DHE16N06

DH16N06/DHF16N06/DHI16N06/DHE16N06/DHB16N06/DHD16N0661A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs Used by the2 DVDSS = 60Vself-aligned planar technology which reduce theconduction loss, improve switching performance andRDS = 16m(on) (TYP)Genhance the avalanche energy. Which accords with the1RoHS standard. ID = 61A3

Datasheet: DHDSJ5N65 , DHDSJ7N65 , DHDZ24B31 , DHE029N08 , DHE035N04 , DHE100N03B13 , DHE10H035R , DHE10H037R , 2N7002 , DHE3205A , DHE3N90 , DHFSJ8N65 , DHFZ24B31 , DHI029N08 , DHI035N04 , DHI100N03B13 , DHI10H035R .

History: DHE100N03B13

Keywords - DHE16N06 MOSFET datasheet

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