DHE16N06 Datasheet. Specs and Replacement

Type Designator: DHE16N06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 61 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 123 nS

Cossⓘ - Output Capacitance: 607 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO263

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DHE16N06 datasheet

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DHE16N06

DH16N06/DHF16N06/DHI16N06/ DHE16N06/DHB16N06/DHD16N06 61A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used by the 2 D VDSS = 60V self-aligned planar technology which reduce the conduction loss, improve switching performance and RDS = 16m (on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. ID = 61A 3... See More ⇒

Detailed specifications: DHDSJ5N65, DHDSJ7N65, DHDZ24B31, DHE029N08, DHE035N04, DHE100N03B13, DHE10H035R, DHE10H037R, MMIS60R580P, DHE3205A, DHE3N90, DHFSJ8N65, DHFZ24B31, DHI029N08, DHI035N04, DHI100N03B13, DHI10H035R

Keywords - DHE16N06 MOSFET specs

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