All MOSFET. DHI029N08 Datasheet

 

DHI029N08 Datasheet and Replacement


   Type Designator: DHI029N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 195 nC
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 1030 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO262
 

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DHI029N08 Datasheet (PDF)

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DHI029N08

DH029N08/DHI029N08/DHE029N08/DH029N08D/DH029N08B180A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedadvanced trench technology design, provided excellent2 DRdson and low gate charge. Which accords with the RoHSV = 80VDSSstandard.G R = 2.9mDS(on) (Type)12 Features3 S I = 180AD Fast switching L

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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