DHI029N08 Datasheet. Specs and Replacement
Type Designator: DHI029N08 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 245 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 1030 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO262
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DHI029N08 datasheet
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DH029N08/DHI029N08/DHE029N08/ DH029N08D/DH029N08B 180A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent 2 D Rdson and low gate charge. Which accords with the RoHS V = 80V DSS standard. G R = 2.9m DS(on) (Type) 1 2 Features 3 S I = 180A D Fast switching L... See More ⇒
Detailed specifications: DHE100N03B13, DHE10H035R, DHE10H037R, DHE16N06, DHE3205A, DHE3N90, DHFSJ8N65, DHFZ24B31, AO4468, DHI035N04, DHI100N03B13, DHI10H035R, DHI10H037R, DHI16N06, DHI3205A, DHI3N90, DHI50N06FZC
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