2SK3163
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3163
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 110
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 125
nC
trⓘ - Rise Time: 300
nS
Cossⓘ -
Output Capacitance: 1000
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075
Ohm
Package:
TO3P
2SK3163
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3163
Datasheet (PDF)
..1. Size:88K renesas
2sk3163.pdf 
2SK3163 Silicon N Channel MOS FET High Speed Power Switching REJ03G1088-0300 (Previous: ADE-208-736A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D1. Gate2. DrainG(Flange)3. SourceS
..2. Size:291K inchange semiconductor
2sk3163.pdf
isc N-Channel MOSFET Transistor 2SK3163FEATURESDrain Current : I = 75A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
0.1. Size:102K renesas
rej03g1088 2sk3163ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.1. Size:102K renesas
rej03g1085 2sk3160ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.2. Size:108K renesas
rej03g1086 2sk3161lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.3. Size:94K renesas
2sk3161.pdf
2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1086-0300 (Previous: ADE-208-734A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =90 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(L)
8.4. Size:88K renesas
2sk3160.pdf
2SK3160 Silicon N Channel MOS FET High Speed Power Switching REJ03G1085-0300 (Previous: ADE-208-751A) Rev.3.00 Sep 07, 2005 Features Low on-resistance RDS =130 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)DG1. Gate2. Drain3. Source1S23
8.5. Size:102K renesas
rej03g1087 2sk3162ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.6. Size:88K renesas
2sk3162.pdf
2SK3162 Silicon N Channel MOS FET High Speed Power Switching REJ03G1087-0400 (Previous: ADE-208-735C) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS = 60 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)DG1. Gate2. Drain3. Source1S23
8.8. Size:356K inchange semiconductor
2sk3161s.pdf
isc N-Channel MOSFET Transistor 2SK3161SFEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 115m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.9. Size:280K inchange semiconductor
2sk3160.pdf
isc N-Channel MOSFET Transistor 2SK3160FEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 170m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.10. Size:282K inchange semiconductor
2sk3161l.pdf
isc N-Channel MOSFET Transistor 2SK3161LFEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 115m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
8.11. Size:280K inchange semiconductor
2sk3162.pdf
isc N-Channel MOSFET Transistor 2SK3162FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 75m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Datasheet: 2SK3155
, 2SK3156
, 2SK3157
, 2SK3158
, 2SK3159
, 2SK3160
, 2SK3161
, 2SK3162
, IRF3205
, 2SK3177
, 2SK3203
, 2SK3209
, 2SK3210
, 2SK3211
, 2SK3212
, 2SK3214
, 2SK3228
.
