DHI3N90 Datasheet. Specs and Replacement
Type Designator: DHI3N90 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 44 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
Package: TO262
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DHI3N90 datasheet
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DH3N90/DHF3N90/DHI3N90/ DHE3N90/DHB3N90/DHD3N90 3A 900V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the 2 D V = 900V DSS self-aligned planar technology which reduce the conduction loss, improve switching performance and R = 4.7 DS(on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. I = 3... See More ⇒
Detailed specifications: DHFZ24B31, DHI029N08, DHI035N04, DHI100N03B13, DHI10H035R, DHI10H037R, DHI16N06, DHI3205A, IRF540N, DHI50N06FZC, DHI50N15, DHI8004, DHI80N08B22, DHI8290, DHI85N08, DHD8290, DHD90N03B17
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