DHI3N90 Spec and Replacement
Type Designator: DHI3N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 44 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.5 Ohm
Package: TO262
DHI3N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DHI3N90 Specs
dh3n90 dhf3n90 dhi3n90 dhe3n90 dhb3n90 dhd3n90.pdf
DH3N90/DHF3N90/DHI3N90/ DHE3N90/DHB3N90/DHD3N90 3A 900V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the 2 D V = 900V DSS self-aligned planar technology which reduce the conduction loss, improve switching performance and R = 4.7 DS(on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. I = 3... See More ⇒
Detailed specifications: DHFZ24B31 , DHI029N08 , DHI035N04 , DHI100N03B13 , DHI10H035R , DHI10H037R , DHI16N06 , DHI3205A , IRF540N , DHI50N06FZC , DHI50N15 , DHI8004 , DHI80N08B22 , DHI8290 , DHI85N08 , DHD8290 , DHD90N03B17 .
History: AP50WN1K0I
Keywords - DHI3N90 MOSFET specs
DHI3N90 cross reference
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History: AP50WN1K0I
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