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DHI80N08B22 Spec and Replacement


   Type Designator: DHI80N08B22
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 145 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 292 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO262

 DHI80N08B22 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DHI80N08B22 Specs

 ..1. Size:1310K  cn wxdh
 dh80n08b22 dhf80n08b22 dhi80n08b22 dhe80n08b22 dhb80n08b22 dhd80n08b22.pdf pdf_icon

DHI80N08B22

DH80N08B22/DHF80N08B22/DHI80N08B22/ DHE80N08B22/DHB80N08B22/DHD80N08B22 80A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 6.5m DS(on) (Type) G standard. 1 I = 80A 3 S D 2 Features ... See More ⇒

 9.1. Size:1237K  cn wxdh
 dh8004 dhi8004 dhe8004 dh8004d dh8004b.pdf pdf_icon

DHI80N08B22

DH8004/DHI8004/DHE8004/ DH8004D/DH8004B 180A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent 2 D Rdson and low gate charge. Which accords with the RoHS V = 80V DSS standard. G R = 2.8m DS(on) (Type) 1 2 Features 3 S I = 180A D Fast switching Low on resi... See More ⇒

Detailed specifications: DHI10H035R , DHI10H037R , DHI16N06 , DHI3205A , DHI3N90 , DHI50N06FZC , DHI50N15 , DHI8004 , IRFZ44 , DHI8290 , DHI85N08 , DHD8290 , DHD90N03B17 , DHD50N06FZC , DHD80N08B22 , DHD90N045R , DHS025N06 .

History: DHD90N045R

Keywords - DHI80N08B22 MOSFET specs

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