All MOSFET. DHI80N08B22 Datasheet

 

DHI80N08B22 Datasheet and Replacement


   Type Designator: DHI80N08B22
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 145 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 292 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO262
 

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DHI80N08B22 Datasheet (PDF)

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DHI80N08B22

DH80N08B22/DHF80N08B22/DHI80N08B22/DHE80N08B22/DHB80N08B22/DHD80N08B2280A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 6.5mDS(on) (Type)Gstandard.1I = 80A3 S D2 Features

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DHI80N08B22

DH8004/DHI8004/DHE8004/DH8004D/DH8004B180A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedadvanced trench technology design, provided excellent2 DRdson and low gate charge. Which accords with the RoHSV = 80VDSSstandard.G R = 2.8mDS(on) (Type)12 Features3 S I = 180AD Fast switching Low on resi

Datasheet: DHI10H035R , DHI10H037R , DHI16N06 , DHI3205A , DHI3N90 , DHI50N06FZC , DHI50N15 , DHI8004 , IRF640 , DHI8290 , DHI85N08 , DHD8290 , DHD90N03B17 , DHD50N06FZC , DHD80N08B22 , DHD90N045R , DHS025N06 .

History: DTG018N04N | DHS160N100D | DTG023N03L | DHS180N10LF

Keywords - DHI80N08B22 MOSFET datasheet

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