DHI80N08B22 Datasheet. Specs and Replacement
Type Designator: DHI80N08B22 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 145 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 292 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO262
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DHI80N08B22 substitution
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DHI80N08B22 datasheet
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DH80N08B22/DHF80N08B22/DHI80N08B22/ DHE80N08B22/DHB80N08B22/DHD80N08B22 80A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 6.5m DS(on) (Type) G standard. 1 I = 80A 3 S D 2 Features ... See More ⇒
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DH8004/DHI8004/DHE8004/ DH8004D/DH8004B 180A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent 2 D Rdson and low gate charge. Which accords with the RoHS V = 80V DSS standard. G R = 2.8m DS(on) (Type) 1 2 Features 3 S I = 180A D Fast switching Low on resi... See More ⇒
Detailed specifications: DHI10H035R, DHI10H037R, DHI16N06, DHI3205A, DHI3N90, DHI50N06FZC, DHI50N15, DHI8004, IRFZ44, DHI8290, DHI85N08, DHD8290, DHD90N03B17, DHD50N06FZC, DHD80N08B22, DHD90N045R, DHS025N06
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