DHI85N08 Datasheet. Specs and Replacement

Type Designator: DHI85N08  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 175 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 132 nS

Cossⓘ - Output Capacitance: 410 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO262

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DHI85N08 datasheet

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DHI85N08

DH85N08/DHF85N08/ DHI85N08/DHE85N08 100A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 6.1m DS(on) (TYP) standard. 1 3 S I = 100A D 2 Features Low on resistance Low gate ch... See More ⇒

Detailed specifications: DHI16N06, DHI3205A, DHI3N90, DHI50N06FZC, DHI50N15, DHI8004, DHI80N08B22, DHI8290, IRF1404, DHD8290, DHD90N03B17, DHD50N06FZC, DHD80N08B22, DHD90N045R, DHS025N06, DHS025N06E, DHS025N10

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