All MOSFET. DHI85N08 Datasheet

 

DHI85N08 Datasheet and Replacement


   Type Designator: DHI85N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 175 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 123 nC
   tr ⓘ - Rise Time: 132 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO262
 

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DHI85N08 Datasheet (PDF)

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DHI85N08

DH85N08/DHF85N08/DHI85N08/DHE85N08100A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 6.1mDS(on) (TYP)standard.13 SI = 100AD2 Features Low on resistance Low gate ch

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