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DHI85N08 Spec and Replacement


   Type Designator: DHI85N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 175 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 132 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO262

 DHI85N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DHI85N08 Specs

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DHI85N08

DH85N08/DHF85N08/ DHI85N08/DHE85N08 100A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 6.1m DS(on) (TYP) standard. 1 3 S I = 100A D 2 Features Low on resistance Low gate ch... See More ⇒

Detailed specifications: DHI16N06 , DHI3205A , DHI3N90 , DHI50N06FZC , DHI50N15 , DHI8004 , DHI80N08B22 , DHI8290 , IRF1404 , DHD8290 , DHD90N03B17 , DHD50N06FZC , DHD80N08B22 , DHD90N045R , DHS025N06 , DHS025N06E , DHS025N10 .

Keywords - DHI85N08 MOSFET specs

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