DHD90N045R Spec and Replacement
Type Designator: DHD90N045R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 98 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 76 nS
Cossⓘ - Output Capacitance: 652 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO251
DHD90N045R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DHD90N045R Specs
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DH90N045R/DHF90N045R/DHI90N045R DHE90N045R/DHB90N045R/DHD90N045R 120A 98V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 98V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.6m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Feature... See More ⇒
dhb90n03b17 dhd90n03b17.pdf
DHB90N03B17/DHD90N03B17 90A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 4.0m DS(on) (TYP) standard. 1 3 S I = 90A D 2 Features Low on resistance Low gate charge Fast ... See More ⇒
Detailed specifications: DHI8004 , DHI80N08B22 , DHI8290 , DHI85N08 , DHD8290 , DHD90N03B17 , DHD50N06FZC , DHD80N08B22 , AO3400 , DHS025N06 , DHS025N06E , DHS025N10 , DHS025N10B , DHS025N10D , DHS025N10E , DHS025N10U , DHS025N88 .
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