E740 Datasheet and Replacement
Type Designator: E740
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 124 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: TO263
E740 substitution
E740 Datasheet (PDF)
740 f740 i740 e740 b740 d740.pdf

740/F740/I740/E740/B740/D74010A 400V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the2 DV = 400VDSSself-aligned planar technology which reduce the conductionloss, improve switching performance and enhance theR = 0.44DS(on)(TYP)Gavalanche energy. Which accords with the RoHS standard.1I = 10A3 S D2 Featu
se7401u.pdf

SHANGHAI July 2009 MICROELECTRONICS CO., LTD. SE7401U 20V P-Channel Enhancement-Mode MOSFET Revision:B General Description Features The MOSFETs from SINO-IC provide For a single mosfet the best combination of fast switching, low VDS = -20 V on-resistance and cost-effectiveness. RDS(ON) = 120m @ VGS=-4.50V @Ids=-2.0A RDS(ON) = 150m @ VGS=-2.50V @Ids=-1.8A Gene
se7401p.pdf

SHANGHAI July 2009 MICROELECTRONICS CO., LTD. SE7401P 20V P-Channel Enhancement-Mode MOSFET Revision:B General Description Features The MOSFETs from SINO-IC provide For a single mosfet the best combination of fast switching, low VDS = -20 V on-resistance and cost-effectiveness. RDS(ON) = 120m @ VGS=-4.50V @Ids=-2.0A RDS(ON) = 150m @ VGS=-2.50V @Ids=-1.8A Gene
Datasheet: DHS025N88D , E110N04 , E13N50 , E20N50 , E25N10 , E50N06 , E630 , E640 , IRF4905 , E80N06 , ED120N10ZR , EN6005 , F10N50 , F10N60 , F10N70 , F10N80 , F110N04 .
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