All MOSFET. E740 Datasheet

 

E740 Datasheet and Replacement


   Type Designator: E740
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 124 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO263
 

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E740 Datasheet (PDF)

 ..1. Size:1411K  cn wxdh
740 f740 i740 e740 b740 d740.pdf pdf_icon

E740

740/F740/I740/E740/B740/D74010A 400V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the2 DV = 400VDSSself-aligned planar technology which reduce the conductionloss, improve switching performance and enhance theR = 0.44DS(on)(TYP)Gavalanche energy. Which accords with the RoHS standard.1I = 10A3 S D2 Featu

 0.1. Size:508K  cn sino-ic
se7401u.pdf pdf_icon

E740

SHANGHAI July 2009 MICROELECTRONICS CO., LTD. SE7401U 20V P-Channel Enhancement-Mode MOSFET Revision:B General Description Features The MOSFETs from SINO-IC provide For a single mosfet the best combination of fast switching, low VDS = -20 V on-resistance and cost-effectiveness. RDS(ON) = 120m @ VGS=-4.50V @Ids=-2.0A RDS(ON) = 150m @ VGS=-2.50V @Ids=-1.8A Gene

 0.2. Size:512K  cn sino-ic
se7401p.pdf pdf_icon

E740

SHANGHAI July 2009 MICROELECTRONICS CO., LTD. SE7401P 20V P-Channel Enhancement-Mode MOSFET Revision:B General Description Features The MOSFETs from SINO-IC provide For a single mosfet the best combination of fast switching, low VDS = -20 V on-resistance and cost-effectiveness. RDS(ON) = 120m @ VGS=-4.50V @Ids=-2.0A RDS(ON) = 150m @ VGS=-2.50V @Ids=-1.8A Gene

Datasheet: DHS025N88D , E110N04 , E13N50 , E20N50 , E25N10 , E50N06 , E630 , E640 , IRF4905 , E80N06 , ED120N10ZR , EN6005 , F10N50 , F10N60 , F10N70 , F10N80 , F110N04 .

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