E740 Datasheet. Specs and Replacement

Type Designator: E740  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 124 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO263

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E740 datasheet

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 740 f740 i740 e740 b740 d740.pdf pdf_icon

E740

740/F740/I740/ E740/B740/D740 10A 400V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the 2 D V = 400V DSS self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the R = 0.44 DS(on)(TYP) G avalanche energy. Which accords with the RoHS standard. 1 I = 10A 3 S D 2 Featu... See More ⇒

 0.1. Size:508K  cn sino-ic
 se7401u.pdf pdf_icon

E740

SHANGHAI July 2009 MICROELECTRONICS CO., LTD. SE7401U 20V P-Channel Enhancement-Mode MOSFET Revision B General Description Features The MOSFETs from SINO-IC provide For a single mosfet the best combination of fast switching, low VDS = -20 V on-resistance and cost-effectiveness. RDS(ON) = 120m @ VGS=-4.50V @Ids=-2.0A RDS(ON) = 150m @ VGS=-2.50V @Ids=-1.8A Gene... See More ⇒

 0.2. Size:512K  cn sino-ic
 se7401p.pdf pdf_icon

E740

SHANGHAI July 2009 MICROELECTRONICS CO., LTD. SE7401P 20V P-Channel Enhancement-Mode MOSFET Revision B General Description Features The MOSFETs from SINO-IC provide For a single mosfet the best combination of fast switching, low VDS = -20 V on-resistance and cost-effectiveness. RDS(ON) = 120m @ VGS=-4.50V @Ids=-2.0A RDS(ON) = 150m @ VGS=-2.50V @Ids=-1.8A Gene... See More ⇒

Detailed specifications: DHS025N88D, E110N04, E13N50, E20N50, E25N10, E50N06, E630, E640, IRF4905, E80N06, ED120N10ZR, EN6005, F10N50, F10N60, F10N70, F10N80, F110N04

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