FDP085N10A PDF and Equivalents Search

 

FDP085N10A Specs and Replacement

Type Designator: FDP085N10A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 188 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 96 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO220

FDP085N10A substitution

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FDP085N10A datasheet

 ..1. Size:662K  fairchild semi
fdp085n10a.pdf pdf_icon

FDP085N10A

November 2013 FDP085N10A N-Channel PowerTrench MOSFET 100 V, 96 A, 8.5 m Features Description RDS(on) = 7.35 m (Typ.) @ VGS = 10 V, ID = 96 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s PowerTrench process that has been tailored to mini- Fast Switching Speed mize the on-state resistance while maintaining superior switching performance. Low... See More ⇒

 ..2. Size:320K  fairchild semi
fdp085n10a f102.pdf pdf_icon

FDP085N10A

May 2011 FDP085N10A_F102 N-Channel PowerTrench MOSFET 100V, 96A, 8.5m Features General Description RDS(on) = 7.35m ( Typ.)@ VGS = 10V, ID = 96A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching perf... See More ⇒

 ..3. Size:4025K  onsemi
fdp085n10a.pdf pdf_icon

FDP085N10A

FDP085N10A N-Channel PowerTrench MOSFET 100 V, 96 A, 8.5 m Features Description This N-Channel MOSFET is produced using ON Semiconductor's RDS(on) = 7.35 m (Typ.) @ VGS = 10 V, ID = 96 A PowerTrench process that has been tailored to minimize the Fast Switching Speed on-state resistance while maintaining superior switching performance. Low Gate Charge, QG = 31 nC... See More ⇒

 ..4. Size:246K  inchange semiconductor
fdp085n10a.pdf pdf_icon

FDP085N10A

isc N-Channel MOSFET Transistor FDP085N10A FEATURES Static drain-source on-resistance RDS(on) 8.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION DC to DC converters synchronous rectification for telecommunication PSU AC motor drives and uninterruptib... See More ⇒

Detailed specifications: FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , FQU13N10L , FDB86102LZ , FQU17P06 , FQU1N60C , IRF640N , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 , FQU2N90TUAM002 , FQU3N50C , FQU4N50TUWS , FQU5N40 .

Keywords - FDP085N10A MOSFET specs

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