FDP085N10A Datasheet and Replacement
Type Designator: FDP085N10A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 188 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 96 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO220
- MOSFET Cross-Reference Search
FDP085N10A Datasheet (PDF)
fdp085n10a.pdf

November 2013FDP085N10AN-Channel PowerTrench MOSFET100 V, 96 A, 8.5 mFeatures Description RDS(on) = 7.35 m (Typ.) @ VGS = 10 V, ID = 96 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors PowerTrench process that has been tailored to mini- Fast Switching Speedmize the on-state resistance while maintaining superiorswitching performance. Low
fdp085n10a f102.pdf

May 2011FDP085N10A_F102N-Channel PowerTrench MOSFET 100V, 96A, 8.5mFeatures General Description RDS(on) = 7.35m ( Typ.)@ VGS = 10V, ID = 96A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching perf
fdp085n10a.pdf

FDP085N10AN-Channel PowerTrench MOSFET100 V, 96 A, 8.5 mFeatures DescriptionThis N-Channel MOSFET is produced using ON Semiconductor's RDS(on) = 7.35 m (Typ.) @ VGS = 10 V, ID = 96 APowerTrench process that has been tailored to minimize the Fast Switching Speedon-state resistance while maintaining superior switching performance. Low Gate Charge, QG = 31 nC
fdp085n10a.pdf

isc N-Channel MOSFET Transistor FDP085N10AFEATURESStatic drain-source on-resistance:RDS(on) 8.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDC to DC converterssynchronous rectification for telecommunication PSUAC motor drives and uninterruptib
Datasheet: FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , FQU13N10L , FDB86102LZ , FQU17P06 , FQU1N60C , 10N60 , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 , FQU2N90TUAM002 , FQU3N50C , FQU4N50TUWS , FQU5N40 .
History: FDN5618P
Keywords - FDP085N10A MOSFET datasheet
FDP085N10A cross reference
FDP085N10A equivalent finder
FDP085N10A lookup
FDP085N10A substitution
FDP085N10A replacement
History: FDN5618P



LIST
Last Update
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
2sd313 replacement | 2n4249 | a1013 transistor | 2sc2705 | bc239 | 2sc3264 | mp38a | bc546 transistor