FDP085N10A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDP085N10A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 188 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 96 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 31 nC
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
Тип корпуса: TO220
Аналог (замена) для FDP085N10A
FDP085N10A Datasheet (PDF)
fdp085n10a.pdf
November 2013FDP085N10AN-Channel PowerTrench MOSFET100 V, 96 A, 8.5 mFeatures Description RDS(on) = 7.35 m (Typ.) @ VGS = 10 V, ID = 96 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors PowerTrench process that has been tailored to mini- Fast Switching Speedmize the on-state resistance while maintaining superiorswitching performance. Low
fdp085n10a f102.pdf
May 2011FDP085N10A_F102N-Channel PowerTrench MOSFET 100V, 96A, 8.5mFeatures General Description RDS(on) = 7.35m ( Typ.)@ VGS = 10V, ID = 96A This N-Channel MOSFET is produced using FairchildSemiconductors advance PowerTrench process that has been Fast Switching Speedespecially tailored to minimize the on-state resistance and yet maintain superior switching perf
fdp085n10a.pdf
FDP085N10AN-Channel PowerTrench MOSFET100 V, 96 A, 8.5 mFeatures DescriptionThis N-Channel MOSFET is produced using ON Semiconductor's RDS(on) = 7.35 m (Typ.) @ VGS = 10 V, ID = 96 APowerTrench process that has been tailored to minimize the Fast Switching Speedon-state resistance while maintaining superior switching performance. Low Gate Charge, QG = 31 nC
fdp085n10a.pdf
isc N-Channel MOSFET Transistor FDP085N10AFEATURESStatic drain-source on-resistance:RDS(on) 8.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDC to DC converterssynchronous rectification for telecommunication PSUAC motor drives and uninterruptib
fdp083n15a.pdf
November 2013FDP083N15AN-Channel PowerTrench MOSFET150 V, 117 A, 8.3 mFeatures Description RDS(on) = 6.85 m ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors PowerTrench process that has been tailored to mini- Fast Switching Speedmize the on-state resistance while maintaining superiorswitching performance. L
fdp083n15a f102.pdf
March 2013FDP083N15A _F102 N-Channel PowerTrench MOSFET 150 V, 117 A, 8.3 mFeatures Description RDS(on) = 6.85 m ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Fast Switching Speedbeen tailored to minimize the on-state resistance while maintain-ing superior switching perfo
fdp083n15a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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Список транзисторов
Обновления
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