DHZ24B31 Datasheet and Replacement
Type Designator: DHZ24B31
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 92.9 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
Package: TO220
DHZ24B31 substitution
DHZ24B31 Datasheet (PDF)
dhz24b31 dhfz24b31 dhiz24b31 dhez24b31 dhbz24b31 dhdz24b31.pdf
DHZ24B31/DHFZ24B31/DHIZ24B31/DHEZ24B31/DHBZ24B31/DHDZ24B3130A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 24mDS(on) (TYP)standard.13 SI = 30AD2 Features Low on resist
Datasheet: E80N06 , ED120N10ZR , EN6005 , F10N50 , F10N60 , F10N70 , F10N80 , F110N04 , AO4407 , DJC070N60F , DJC070N65M2 , DJD380N65T , DJD420N70T , DJF380N65T , DJF420N70T , DSB150N10L3 , DSB190N10L3 .
History: DJD420N70T | IRFD014
Keywords - DHZ24B31 MOSFET datasheet
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History: DJD420N70T | IRFD014
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