All MOSFET. DJC070N60F Datasheet

 

DJC070N60F Datasheet and Replacement


   Type Designator: DJC070N60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 272 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 105 nC
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 96 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO247
 

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DJC070N60F Datasheet (PDF)

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DJC070N60F

DJC070N60F42A 600V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is using advanced2 DV = 600VDSSsuper junction technology and design to provide excellentRdson with low gate charge. Which accords with theR = 61mDS(on) (TYP)GRoHS standard.1I = 42A3 S D2 Features Fast Recovery Time Low on resistance Low gate c

 6.1. Size:960K  cn wxdh
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DJC070N60F

DJC070N65M2 70A 650V N-channel Super Junction Power MOSFET 1 Description This N-channel enhanced vdmosfets, is using advanced super junction technology and design to provide excellent 2 DV = 650V DSSRds(on) with low gate charge. Which accords with the R =63m DS(on) (TYP)GRoHS standard. 1I = 70A D3 S2 Features Fast switching Low on resistance

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