DJC070N65M2 Datasheet. Specs and Replacement

Type Designator: DJC070N65M2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 781 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 78 nS

Cossⓘ - Output Capacitance: 101 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO247

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DJC070N65M2 datasheet

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DJC070N65M2

DJC070N65M2 70A 650V N-channel Super Junction Power MOSFET 1 Description This N-channel enhanced vdmosfets, is using advanced super junction technology and design to provide excellent 2 D V = 650V DSS Rds(on) with low gate charge. Which accords with the R =63m DS(on) (TYP) G RoHS standard. 1 I = 70A D 3 S 2 Features Fast switching Low on resistance ... See More ⇒

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DJC070N65M2

DJC070N60F 42A 600V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced vdmosfets, is using advanced 2 D V = 600V DSS super junction technology and design to provide excellent Rdson with low gate charge. Which accords with the R = 61m DS(on) (TYP) G RoHS standard. 1 I = 42A 3 S D 2 Features Fast Recovery Time Low on resistance Low gate c... See More ⇒

Detailed specifications: EN6005, F10N50, F10N60, F10N70, F10N80, F110N04, DHZ24B31, DJC070N60F, 12N60, DJD380N65T, DJD420N70T, DJF380N65T, DJF420N70T, DSB150N10L3, DSB190N10L3, DSD040N08N3A, DSD065N04LA

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