All MOSFET. DHS160N100D Datasheet

 

DHS160N100D Datasheet and Replacement


   Type Designator: DHS160N100D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 17 nC
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 153 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO252
 

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DHS160N100D Datasheet (PDF)

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DHS160N100D

DHS160N100B&DHS160N100D45A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced SGT trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 18mDS(on) (TYP)the RoHS standard.13 SI = 45AD2 Features Low on resistance Low gate charge

Datasheet: DSD270N12N3 , DHS110N15 , DHS110N15D , DHS110N15E , DHS110N15F , DHS130N06B , DHS130N06D , DHS160N100B , IRFZ46N , DHS180N10L , DHS180N10LB , DHS180N10LD , DHS180N10LE , DHS180N10LF , DHS180N10LI , DHS250N10D , DHS400N10D .

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