DHS160N100D Datasheet. Specs and Replacement
Type Designator: DHS160N100D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 153 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO252
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DHS160N100D substitution
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DHS160N100D datasheet
dhs160n100b dhs160n100d.pdf
DHS160N100B&DHS160N100D 45A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced SGT trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 18m DS(on) (TYP) the RoHS standard. 1 3 S I = 45A D 2 Features Low on resistance Low gate charge ... See More ⇒
Detailed specifications: DSD270N12N3, DHS110N15, DHS110N15D, DHS110N15E, DHS110N15F, DHS130N06B, DHS130N06D, DHS160N100B, SI2302, DHS180N10L, DHS180N10LB, DHS180N10LD, DHS180N10LE, DHS180N10LF, DHS180N10LI, DHS250N10D, DHS400N10D
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