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DHS180N10LD Spec and Replacement


   Type Designator: DHS180N10LD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 358 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO252

 DHS180N10LD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DHS180N10LD Specs

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 dhs180n10l dhs180n10lf dhs180n10li dhs180n10le dhs180n10lb dhs180n10ld.pdf pdf_icon

DHS180N10LD

DHS180N10L/DHS180N10LF/DHS180N10LI/ DHS180N10LE/DHS180N10LB/DHS180N10LD 47A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced SGT trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 18m DS(on) (TYP) the RoHS standard. 1 3 S I = 47A D 2 Features ... See More ⇒

 ..2. Size:1258K  cn wxdh
 dhs180n10ld.pdf pdf_icon

DHS180N10LD

DHS180N10LD 100V/15m /50A N-MOSFET Features Key Parameters VDS Low on resistance 100V RDS(on)typ. Low reverse transfer capacitances 15m ID 100% single pulse avalanche energy test 50A Ciss@10V 100% VDS test 1076pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 2nC Applications Motor Control and Drive Charge/Discharge for Battery Management Sy... See More ⇒

Detailed specifications: DHS110N15E , DHS110N15F , DHS130N06B , DHS130N06D , DHS160N100B , DHS160N100D , DHS180N10L , DHS180N10LB , 20N50 , DHS180N10LE , DHS180N10LF , DHS180N10LI , DHS250N10D , DHS400N10D , DTE043N04NA , DTG018N04N , DTG023N03L .

History: STD140N6F7

Keywords - DHS180N10LD MOSFET specs

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