DHS400N10D Datasheet. Specs and Replacement
Type Designator: DHS400N10D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 12.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26.1 nS
Cossⓘ - Output Capacitance: 71 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
Package: TO252
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DHS400N10D substitution
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DHS400N10D datasheet
Detailed specifications: DHS160N100D, DHS180N10L, DHS180N10LB, DHS180N10LD, DHS180N10LE, DHS180N10LF, DHS180N10LI, DHS250N10D, 2N60, DTE043N04NA, DTG018N04N, DTG023N03L, DTG025N04NA, DTG045N04NA, DTG050P06LA, DTJ018N04N, F12N60
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 2SK3646-01SJ | IXTT75N10L2
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