All MOSFET. DHS400N10D Datasheet

 

DHS400N10D Datasheet and Replacement


   Type Designator: DHS400N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 12.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 8 nC
   tr ⓘ - Rise Time: 26.1 nS
   Cossⓘ - Output Capacitance: 71 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
   Package: TO252
 

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DHS400N10D Datasheet (PDF)

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DHS400N10D

DHS400N10D20A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV =100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 45mDS(on) (TYP)standard.13 SI = 20AD2 Features Low on resistance Low gate charge Fast switching

Datasheet: DHS160N100D , DHS180N10L , DHS180N10LB , DHS180N10LD , DHS180N10LE , DHS180N10LF , DHS180N10LI , DHS250N10D , IRF830 , DTE043N04NA , DTG018N04N , DTG023N03L , DTG025N04NA , DTG045N04NA , DTG050P06LA , DTJ018N04N , F12N60 .

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