DTG018N04N Datasheet. Specs and Replacement
Type Designator: DTG018N04N 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 273 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 78 nS
Cossⓘ - Output Capacitance: 1204 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: TO220
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DTG018N04N datasheet
dtg018n04n dtj018n04n.pdf
DTG018N04N/DTJ018N04N 180A 40V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent V = 40V DSS 2 D Rdson and low gate charge. Which accords with the RoHS R = 1.5m DS(on) (TO-220)TYP standard. G R = 1.5m DS(on) (TO-262)TYP 1 I = 300A D Silicon limited 3 S 2 Featur... See More ⇒
Detailed specifications: DHS180N10LB, DHS180N10LD, DHS180N10LE, DHS180N10LF, DHS180N10LI, DHS250N10D, DHS400N10D, DTE043N04NA, P60NF06, DTG023N03L, DTG025N04NA, DTG045N04NA, DTG050P06LA, DTJ018N04N, F12N60, F13N50, F14N65
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