All MOSFET. DTG018N04N Datasheet

 

DTG018N04N Datasheet and Replacement


   Type Designator: DTG018N04N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 273 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 193 nC
   tr ⓘ - Rise Time: 78 nS
   Cossⓘ - Output Capacitance: 1204 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: TO220
 

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DTG018N04N Datasheet (PDF)

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DTG018N04N

DTG018N04N/DTJ018N04N180A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets usedadvanced trench technology design, provided excellent V = 40VDSS2 DRdson and low gate charge. Which accords with the RoHSR = 1.5mDS(on) (TO-220)TYPstandard.GR = 1.5mDS(on) (TO-262)TYP1I = 300ADSilicon limited3 S2 Featur

Datasheet: DHS180N10LB , DHS180N10LD , DHS180N10LE , DHS180N10LF , DHS180N10LI , DHS250N10D , DHS400N10D , DTE043N04NA , AO3401 , DTG023N03L , DTG025N04NA , DTG045N04NA , DTG050P06LA , DTJ018N04N , F12N60 , F13N50 , F14N65 .

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