FDMC8030 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDMC8030
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.9 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Drain Current |Id|: 12 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
Package: MLP3x3
FDMC8030 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDMC8030 Datasheet (PDF)
1.1. fdmc8030.pdf 
Size:318K _fairchild_semi
July 2013 FDMC8030 Dual N-Channel Power Trench® MOSFET 40 V, 12 A, 10 mΩ Features General Description Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 12 A This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is Max rDS(on) = 14 mΩ at VGS = 4.5 V, ID = 10 A enhanced for exceptional thermal performance. Max rDS(on) = 28 mΩ at VGS =
3.1. fdmc8032l.pdf Size:333K _fairchild_semi
October 2013 FDMC8032L Dual N-Channel PowerTrench® MOSFET 40 V, 7 A, 20 mΩ Features General Description Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is Max rDS(on) = 27 mΩ at VGS = 4.5 V, ID = 6 A enhanced for exceptional thermal performance. Low Inductance Packaging Short
4.1. fdmc8010et30.pdf Size:413K _upd-mosfet
January 2015 FDMC8010ET30 N-Channel PowerTrench® MOSFET 30 V, 174 A, 1.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175°C Semiconductor’s advanced PowerTrench® process that has Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A been especially tailored to minimize the on-state resistance. This device is well suited for
4.2. fdmc8010.pdf Size:545K _fairchild_semi
December 2014 FDMC8010 N-Channel PowerTrench® MOSFET 30 V, 75 A, 1.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A Semiconductor’s advanced PowerTrench® process that has Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A been especially tailored to minimize the on-state resistance. This device is
4.3. fdmc8026s.pdf Size:349K _fairchild_semi
March 2011 FDMC8026S N-Channel PowerTrench® SyncFETTM 30 V, 21 A, 4.4 m? Features General Description The FDMC8026S has been designed to minimize losses in Max rDS(on) = 4.4 m? at VGS = 10 V, ID = 19 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m? at VGS = 4.5 V, ID = 17.5 A package technologies have been combined to offer the lowest rDS(on) wh
4.4. fdmc8015l.pdf Size:322K _fairchild_semi
April 2011 FDMC8015L N-Channel Power Trench® MOSFET 40 V, 18 A, 26 m? Features General Description Max rDS(on) = 26 m? at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has Max rDS(on) = 36 m? at VGS = 4.5 V, ID = 6 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm max in
Datasheet: FQU13N10L , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , BUZ11 , FQU2N90TU_AM002 , FQU3N50C , FQU4N50TU_WS , FQU5N40 , FDMC7582 , FQU5N60C , FDMQ8403 , FQU5P20 .
