FDMC8030 - описание и поиск аналогов

July 2013 FDMC8030 Dual N-Channel Power Trench MOSFET 40 V, 12 A, 10 m Features General Description Max rDS(on) = 10 m at VGS = 10 V, ID = 12 A This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is Max rDS(on) = 14 m at VGS = 4.5 V, ID = 10 A enhanced for exceptional thermal performance. Max rDS(on) = 28 m at VGS =

October 2013 FDMC8032L Dual N-Channel PowerTrench MOSFET 40 V, 7 A, 20 m Features General Description Max rDS(on) = 20 m at VGS = 10 V, ID = 7 A This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is Max rDS(on) = 27 m at VGS = 4.5 V, ID = 6 A enhanced for exceptional thermal performance. Low Inductance Packaging Short

March 2011 FDMC8026S N-Channel PowerTrench SyncFETTM 30 V, 21 A, 4.4 m Features General Description The FDMC8026S has been designed to minimize losses in Max rDS(on) = 4.4 m at VGS = 10 V, ID = 19 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17.5 A package technologies have been combined to offer the lowest rDS

December 2014 FDMC8010 N-Channel PowerTrench MOSFET 30 V, 75 A, 1.3 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.3 m at VGS = 10 V, ID = 30 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.8 m at VGS = 4.5 V, ID = 25 A been especially tailored to minimize the on-state resistance. This device is

April 2011 FDMC8015L N-Channel Power Trench MOSFET 40 V, 18 A, 26 m Features General Description Max rDS(on) = 26 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process that has Max rDS(on) = 36 m at VGS = 4.5 V, ID = 6 A been especially tailored to minimize the on-state resistance and Low Profile - 1 m

January 2015 FDMC8010ET30 N-Channel PowerTrench MOSFET 30 V, 174 A, 1.3 m Features General Description This N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175 C Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.3 m at VGS = 10 V, ID = 30 A been especially tailored to minimize the on-state resistance. This device is well suited for

FDMC8010 MOSFET N-Channel, POWERTRENCH) 30 V, 75 A, 1.3 mW General Description www.onsemi.com This N-Channel MOSFET is produced using ON Semiconductor s advanced POWERTRENCH process that has been especially tailored Pin 1 Pin 1 S S to minimize the on-state resistance. This device is well suited for S G applications where ultra low rDS(on) is required in small spaces such as

FDMC8010DC MOSFET N-Channel, DUAL COOL) 33, POWERTRENCH) 30 V, 157 A, 1.28 mW www.onsemi.com General Description This N-Channel MOSFET is produced using ON Semiconductor s DD D D advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer G S the lowest rDS(on) while maintaining excellent switching performance S