DHS042N85P Datasheet and Replacement
Type Designator: DHS042N85P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 109
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id| ⓘ - Maximum Drain Current: 108
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
Qg ⓘ - Total Gate Charge: 50
nC
tr ⓘ - Rise Time: 17
nS
Cossⓘ -
Output Capacitance: 622
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0052
Ohm
Package:
DFN5X6
-
MOSFET ⓘ Cross-Reference Search
DHS042N85P Datasheet (PDF)
..1. Size:792K cn wxdh
dhs042n85p.pdf 
DHS042N85P108A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.5mDS(on) (TYP)the RoHS standard.13 SI = 108AD2 Features Fast switching Low on resistance Low g
7.1. Size:964K cn wxdh
dhs042n15 dhs042n15e.pdf
DHS042N15&DHS042N15E150A 150V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFETV = 150VDSSutilizes advanced Split Gate Trench technology, which2 Dprovides excellent Rdson and low Gate charge at the sameR = 5.0mTO-220DS(on) (TYP)time. Which accords with the RoHS standard.G1 R = 4.8mTO-263DS(on) (TYP)3 S
9.1. Size:824K cn wxdh
dhs044n12 dhs044n12e.pdf
DHS044N12/DHS044N12E160A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV = 120VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.7mDS(on) (TYP)the RoHS standard.13 SI = 160AD2 Features Low on resistance Low gate charge
9.2. Size:819K cn wxdh
dhs044n12.pdf
DHS044N12160A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFET2 DV = 120VDSSutilizes advanced Split Gate Trench technology, whichprovides excellent Rdson and low Gate charge at the sameGR = 3.7mDS(on) (TYP)time. Which accords with the RoHS standard.13 SI = 160AD2 Features Low on resistance Low gat
9.3. Size:1350K cn wxdh
dhs045n88 dhs045n88f dhs045n88i dhs045n88e dhs045n88b dhs045n88d.pdf
DHS045N88/DHS045N88F/DHS045N88I/DHS045N88E/DHS045N88B/DHS045N88D120A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.6mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Featur
9.4. Size:1390K cn wxdh
dhs046n10 dhs046n10f dhs046n10i dhs046n10e dhs046n10b dhs046n10d.pdf
DHS046N10/DHS046N10F/DHS046N10IDHS046N10E/DHS046N10B/DHS046N10D120A 98V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 98VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.6mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Feature
9.5. Size:1350K cn wxdh
dhs045n85 dhs045n85f dhs045n85i dhs045n85e dhs045n85b dhs045n85d.pdf
DHS045N85/DHS045N85F/DHS045N85I/DHS045N85E/DHS045N85B/DHS045N85D120A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.7mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Featur
9.6. Size:698K cn wxdh
dhs043n85p.pdf
DHS043N85P112A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.8mDS(on) (TYP)the RoHS standard.13 SI =112AD2 Features Fast switching Low on resistance Low ga
9.7. Size:1370K cn wxdh
dhs045n98 dhs045n98f dhs045n98i dhs045n98e dhs045n98b dhs045n98d.pdf
DHS045N98/DHS045N98F/DHS045N98I/DHS045N98E/DHS045N98B/DHS045N98D120A 98V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 98VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 5.1mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Featur
9.8. Size:813K cn wxdh
dhs043n07p.pdf
DHS043N07P100A 70V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 70VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.0mDS(on) (TYP)the RoHS standard.13 SI = 100AD2 Features Low on resistance Low gate charge Fast
9.9. Size:961K cn wxdh
dhs044n12u.pdf
DHS044N12U270A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFET2 DV = 120VDSutilizes advanced Split Gate Trench technology, whichprovides excellent Rdson and low Gate charge at the sameGR = 2.7mDS(on) (TYP)time. Which accords with the RoHS standard. 13 SI = 270AD2 Features Low on resistance Low gate
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Keywords - DHS042N85P MOSFET datasheet
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