DHS042N85P Datasheet. Specs and Replacement

Type Designator: DHS042N85P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 109 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 108 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 622 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm

Package: DFN5X6

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DHS042N85P datasheet

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DHS042N85P

DHS042N85P 108A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.5m DS(on) (TYP) the RoHS standard. 1 3 S I = 108A D 2 Features Fast switching Low on resistance Low g... See More ⇒

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DHS042N85P

DHS042N15&DHS042N15E 150A 150V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET V = 150V DSS utilizes advanced Split Gate Trench technology, which 2 D provides excellent Rdson and low Gate charge at the same R = 5.0m TO-220 DS(on) (TYP) time. Which accords with the RoHS standard. G 1 R = 4.8m TO-263 DS(on) (TYP) 3 S ... See More ⇒

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DHS042N85P

DHS044N12/DHS044N12E 160A 120V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V = 120V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.7m DS(on) (TYP) the RoHS standard. 1 3 S I = 160A D 2 Features Low on resistance Low gate charge... See More ⇒

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DHS042N85P

DHS044N12 160A 120V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET 2 D V = 120V DSS utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same G R = 3.7m DS(on) (TYP) time. Which accords with the RoHS standard. 1 3 S I = 160A D 2 Features Low on resistance Low gat... See More ⇒

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Detailed specifications: F16N65, F18N50, F18N65, F20N50, F20N60, F25N10, DHS042N15, DHS042N15E, MMIS60R580P, DHS043N07P, DHS043N85P, DHS044N12, DHS044N12E, DHS044N12U, DHS045N85, DHS045N85B, DHS045N85D

Keywords - DHS042N85P MOSFET specs

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