Справочник MOSFET. DHS042N85P

 

DHS042N85P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: DHS042N85P
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 109 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 108 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 622 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0052 Ohm
   Тип корпуса: DFN5X6
 

 Аналог (замена) для DHS042N85P

   - подбор ⓘ MOSFET транзистора по параметрам

 

DHS042N85P Datasheet (PDF)

 ..1. Size:792K  cn wxdh
 dhs042n85p.pdf pdf_icon

DHS042N85P

DHS042N85P108A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.5mDS(on) (TYP)the RoHS standard.13 SI = 108AD2 Features Fast switching Low on resistance Low g

 7.1. Size:964K  cn wxdh
 dhs042n15 dhs042n15e.pdf pdf_icon

DHS042N85P

DHS042N15&DHS042N15E150A 150V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFETV = 150VDSSutilizes advanced Split Gate Trench technology, which2 Dprovides excellent Rdson and low Gate charge at the sameR = 5.0mTO-220DS(on) (TYP)time. Which accords with the RoHS standard.G1 R = 4.8mTO-263DS(on) (TYP)3 S

 9.1. Size:824K  cn wxdh
 dhs044n12 dhs044n12e.pdf pdf_icon

DHS042N85P

DHS044N12/DHS044N12E160A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV = 120VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.7mDS(on) (TYP)the RoHS standard.13 SI = 160AD2 Features Low on resistance Low gate charge

 9.2. Size:819K  cn wxdh
 dhs044n12.pdf pdf_icon

DHS042N85P

DHS044N12160A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFET2 DV = 120VDSSutilizes advanced Split Gate Trench technology, whichprovides excellent Rdson and low Gate charge at the sameGR = 3.7mDS(on) (TYP)time. Which accords with the RoHS standard.13 SI = 160AD2 Features Low on resistance Low gat

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... F16N65 , F18N50 , F18N65 , F20N50 , F20N60 , F25N10 , DHS042N15 , DHS042N15E , 2N7002 , DHS043N07P , DHS043N85P , DHS044N12 , DHS044N12E , DHS044N12U , DHS045N85 , DHS045N85B , DHS045N85D .

History: F20N50

 

 
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