All MOSFET. DHS043N85P Datasheet

 

DHS043N85P Datasheet and Replacement


   Type Designator: DHS043N85P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 112 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 78 nC
   tr ⓘ - Rise Time: 107 nS
   Cossⓘ - Output Capacitance: 712 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: DFN5X6-8L
 

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DHS043N85P Datasheet (PDF)

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 dhs043n85p.pdf pdf_icon

DHS043N85P

DHS043N85P112A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.8mDS(on) (TYP)the RoHS standard.13 SI =112AD2 Features Fast switching Low on resistance Low ga

 7.1. Size:813K  cn wxdh
 dhs043n07p.pdf pdf_icon

DHS043N85P

DHS043N07P100A 70V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 70VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.0mDS(on) (TYP)the RoHS standard.13 SI = 100AD2 Features Low on resistance Low gate charge Fast

 9.1. Size:824K  cn wxdh
 dhs044n12 dhs044n12e.pdf pdf_icon

DHS043N85P

DHS044N12/DHS044N12E160A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV = 120VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.7mDS(on) (TYP)the RoHS standard.13 SI = 160AD2 Features Low on resistance Low gate charge

 9.2. Size:819K  cn wxdh
 dhs044n12.pdf pdf_icon

DHS043N85P

DHS044N12160A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFET2 DV = 120VDSSutilizes advanced Split Gate Trench technology, whichprovides excellent Rdson and low Gate charge at the sameGR = 3.7mDS(on) (TYP)time. Which accords with the RoHS standard.13 SI = 160AD2 Features Low on resistance Low gat

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Keywords - DHS043N85P MOSFET datasheet

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