DHS043N85P datasheet, аналоги, основные параметры

Наименование производителя: DHS043N85P  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 160 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 85 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 112 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 107 ns

Cossⓘ - Выходная емкость: 712 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0046 Ohm

Тип корпуса: DFN5X6-8L

  📄📄 Копировать 

Аналог (замена) для DHS043N85P

- подборⓘ MOSFET транзистора по параметрам

 

DHS043N85P даташит

 ..1. Size:698K  cn wxdh
 dhs043n85p.pdf pdf_icon

DHS043N85P

DHS043N85P 112A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.8m DS(on) (TYP) the RoHS standard. 1 3 S I =112A D 2 Features Fast switching Low on resistance Low ga

 7.1. Size:813K  cn wxdh
 dhs043n07p.pdf pdf_icon

DHS043N85P

DHS043N07P 100A 70V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 70V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.0m DS(on) (TYP) the RoHS standard. 1 3 S I = 100A D 2 Features Low on resistance Low gate charge Fast

 9.1. Size:824K  cn wxdh
 dhs044n12 dhs044n12e.pdf pdf_icon

DHS043N85P

DHS044N12/DHS044N12E 160A 120V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V = 120V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.7m DS(on) (TYP) the RoHS standard. 1 3 S I = 160A D 2 Features Low on resistance Low gate charge

 9.2. Size:819K  cn wxdh
 dhs044n12.pdf pdf_icon

DHS043N85P

DHS044N12 160A 120V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET 2 D V = 120V DSS utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same G R = 3.7m DS(on) (TYP) time. Which accords with the RoHS standard. 1 3 S I = 160A D 2 Features Low on resistance Low gat

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... F18N65, F20N50, F20N60, F25N10, DHS042N15, DHS042N15E, DHS042N85P, DHS043N07P, AO4407A, DHS044N12, DHS044N12E, DHS044N12U, DHS045N85, DHS045N85B, DHS045N85D, DHS045N85E, DHS045N85F