All MOSFET. DHS044N12E Datasheet

 

DHS044N12E Datasheet and Replacement


   Type Designator: DHS044N12E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 272 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 1023 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO263
 

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DHS044N12E Datasheet (PDF)

 ..1. Size:824K  cn wxdh
 dhs044n12 dhs044n12e.pdf pdf_icon

DHS044N12E

DHS044N12/DHS044N12E160A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV = 120VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.7mDS(on) (TYP)the RoHS standard.13 SI = 160AD2 Features Low on resistance Low gate charge

 5.1. Size:819K  cn wxdh
 dhs044n12.pdf pdf_icon

DHS044N12E

DHS044N12160A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFET2 DV = 120VDSSutilizes advanced Split Gate Trench technology, whichprovides excellent Rdson and low Gate charge at the sameGR = 3.7mDS(on) (TYP)time. Which accords with the RoHS standard.13 SI = 160AD2 Features Low on resistance Low gat

 5.2. Size:961K  cn wxdh
 dhs044n12u.pdf pdf_icon

DHS044N12E

DHS044N12U270A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFET2 DV = 120VDSutilizes advanced Split Gate Trench technology, whichprovides excellent Rdson and low Gate charge at the sameGR = 2.7mDS(on) (TYP)time. Which accords with the RoHS standard. 13 SI = 270AD2 Features Low on resistance Low gate

 9.1. Size:1350K  cn wxdh
 dhs045n88 dhs045n88f dhs045n88i dhs045n88e dhs045n88b dhs045n88d.pdf pdf_icon

DHS044N12E

DHS045N88/DHS045N88F/DHS045N88I/DHS045N88E/DHS045N88B/DHS045N88D120A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.6mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Featur

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Datasheet: F20N60 , F25N10 , DHS042N15 , DHS042N15E , DHS042N85P , DHS043N07P , DHS043N85P , DHS044N12 , 5N50 , DHS044N12U , DHS045N85 , DHS045N85B , DHS045N85D , DHS045N85E , DHS045N85F , DHS045N85I , DHS045N88 .

History: F10N70 | DHS042N15 | IPB049N06L3G

Keywords - DHS044N12E MOSFET datasheet

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