DHS045N85 Datasheet. Specs and Replacement

Type Designator: DHS045N85  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 145 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 1225 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO220

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DHS045N85 datasheet

 ..1. Size:1350K  cn wxdh
 dhs045n85 dhs045n85f dhs045n85i dhs045n85e dhs045n85b dhs045n85d.pdf pdf_icon

DHS045N85

DHS045N85/DHS045N85F/DHS045N85I/ DHS045N85E/DHS045N85B/DHS045N85D 120A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.7m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Featur... See More ⇒

 6.1. Size:1350K  cn wxdh
 dhs045n88 dhs045n88f dhs045n88i dhs045n88e dhs045n88b dhs045n88d.pdf pdf_icon

DHS045N85

DHS045N88/DHS045N88F/DHS045N88I/ DHS045N88E/DHS045N88B/DHS045N88D 120A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.6m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Featur... See More ⇒

 7.1. Size:1370K  cn wxdh
 dhs045n98 dhs045n98f dhs045n98i dhs045n98e dhs045n98b dhs045n98d.pdf pdf_icon

DHS045N85

DHS045N98/DHS045N98F/DHS045N98I/ DHS045N98E/DHS045N98B/DHS045N98D 120A 98V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 98V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 5.1m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Featur... See More ⇒

 9.1. Size:824K  cn wxdh
 dhs044n12 dhs044n12e.pdf pdf_icon

DHS045N85

DHS044N12/DHS044N12E 160A 120V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V = 120V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.7m DS(on) (TYP) the RoHS standard. 1 3 S I = 160A D 2 Features Low on resistance Low gate charge... See More ⇒

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Detailed specifications: DHS042N15, DHS042N15E, DHS042N85P, DHS043N07P, DHS043N85P, DHS044N12, DHS044N12E, DHS044N12U, AOD4184A, DHS045N85B, DHS045N85D, DHS045N85E, DHS045N85F, DHS045N85I, DHS045N88, DHS045N88B, DSP018N04LA

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.