DSP032N08NA Datasheet and Replacement
Type Designator: DSP032N08NA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 170 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 85 nC
tr ⓘ - Rise Time: 67 nS
Cossⓘ - Output Capacitance: 923 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: DFN5X6-8L
DSP032N08NA substitution
DSP032N08NA Datasheet (PDF)
dsp032n08na.pdf

DSP032N08NA170A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 2.4mDS(on) (TYP)the RoHS standard.13 SI =170AD2 Features AEC-Q101 qualified Fast switching Low o
dsp037n08n3.pdf

DSP037N08N3 80V/3.4m/100A N-MOSFET Features Key ParametersVDS Low on resistance 80VRDS(on)typ. Low reverse transfer capacitances 3.4m 100% single pulse avalanche energy test VTH 3VID(Silicon limit ) 100% VDS test 133AID(Package limit ) Pb-Free plating / Halogen-Free / RoHS compliant 100ACiss@10V3402pFQgd 21nCApplications Power switching ap
dsp038n08na.pdf

DSP038N08NA130A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.2mDS(on) (TYP)the RoHS standard.13 SI =130AD2 Features Fast switching Low on resistance Low g
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: DSU035N10N3A
Keywords - DSP032N08NA MOSFET datasheet
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DSP032N08NA replacement
History: DSU035N10N3A



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