All MOSFET. DSU023N10N3 Datasheet

 

DSU023N10N3 Datasheet and Replacement


   Type Designator: DSU023N10N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 313 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 281 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 160 nC
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 2322 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: TOLL
 

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DSU023N10N3 Datasheet (PDF)

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DSU023N10N3

DSU023N10N3 100V/2m/281A N-MOSFET Features Key ParametersVDS 100V Advanced SGT2 silicon technology utilized Extremely low on-resistance RDS(on) RDS(on)typ. 2mID 281A Low reverse transfer capacitances 100% single pulse avalanche energy test Vth 3VCiss@10V 12750pF 100% VDS test Pb-Free plating / Halogen-Free / RoHS compliant Qgd 24.3nCApplications

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DSU023N10N3

DSU021N10NA300A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFET2 DV = 100VDSutilizes advanced Split Gate Trench technology, whichprovides excellent Rdson and low Gate charge at the sameR = 1.6mDS(on) (TYP)Gtime. Which accords with the RoHS standard.1I = 300AD3 S2 Features Low on resistance Low ga

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DSU023N10N3

DSU024N10N3A 100V/1.8m/272A N-MOSFET Features Key ParametersVDS AEC-Q101 qualified 100VRDS(on)typ. Low on resistance 1.8m Low reverse transfer capacitances VTH 3VID 100% single pulse avalanche energy test 272ACiss@10V 100% VDS test 7035pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 27nCApplications Power switching applications

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