All MOSFET. DSU035N14N3 Datasheet

 

DSU035N14N3 Datasheet and Replacement


   Type Designator: DSU035N14N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 135 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 225 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 108 nC
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 630 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: TOLL
 

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DSU035N14N3 Datasheet (PDF)

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DSU035N14N3

DSU035N14N3 135V/3.3m/225A N-MOSFET Features Key ParametersVDS Low on resistance 135VRDS(on)typ. Low reverse transfer capacitances 3.3m 100% single pulse avalanche energy test VTH 3VID 100% VDS test 225ACiss@10V Pb-Free plating / Halogen-Free / RoHS compliant 7463pFQgd 23nCApplications Power switching applications DC-DC converters Fu

 6.1. Size:638K  cn wxdh
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DSU035N14N3

DSU035N10N3A100V/2.9m/190A N-MOSFETFeatures Key ParametersVDS AEC-Q101 qualified 100VRDS(on)typ. Low on resistance 2.9mID Low reverse transfer capacitances 190A 100% single pulse avalanche energy test Ciss@10V 4532pF 100% VDS test Qgd 23nC Pb-Free plating / Halogen-Free / RoHS compliantApplications Power switching applications DC-DC conv

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

Keywords - DSU035N14N3 MOSFET datasheet

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