DHS035N88 Datasheet. Specs and Replacement

Type Designator: DHS035N88  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 175 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 124 nS

Cossⓘ - Output Capacitance: 1129 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: TO220

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DHS035N88 datasheet

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 dhs035n88 dhs035n88e dhs035n88i.pdf pdf_icon

DHS035N88

DHS035N88/DHS035N88E/DHS035N88I 175A 80V N-channel Enhancement Mode Power MOSFET 1 Description V = 80V DSS These N-channel enhancement mode power mosfets used 2 D advanced splite gate trench technology design, provided R =3.6m (TO-220&262) DS(on)(TYP) excellent Rdson and low gate charge. Which accords with G the RoHS standard. R = 3.3m (TO-263) DS(on) (TYP) 1 3 S I =175A D ... See More ⇒

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 dhs035n10 dhs035n10e.pdf pdf_icon

DHS035N88

DHS035N10&DHS035N10E 180A 100V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET V = 100V DSS utilizes advanced Split Gate Trench technology, which 2 D provides excellent Rdson and low Gate charge at the same R = 3.2m TO-220 DS(on) (TYP) time. Which accords with the RoHS standard. G 1 R = 3.0m TO-263 DS(on) (TYP) 3 S ... See More ⇒

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DHS035N88

DHS031N07P 100A 68V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D advanced splite gate trench technology design, provided V =68V DSS excellent Rdson and low gate charge. Which accords with G R =2.9m DS(on) (TYP) the RoHS standard. 1 3 S I Silicon limit = 150A D 2 Features I Package limit 100A = Fas... See More ⇒

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 dhs030n88 dhs030n88f dhs030n88i dhs030n88e.pdf pdf_icon

DHS035N88

DHS030N88/DHS030N88F/ DHS030N88I/DHS030N88E 174A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.0m DS(on) (TYP) the RoHS standard. 1 3 S I = 174A D 2 Features Fast switching... See More ⇒

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Detailed specifications: DSU024N10N3A, DSU035N10N3A, DSU035N14N3, DTD080N07N, DTE025N04NA, DHS031N07P, DHS035N10, DHS035N10E, IRF630, DHS035N88E, DHS035N88I, DHS045N88D, DHS045N88E, DHS045N88F, DHS045N88I, DHS045N98, DHS045N98B

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