All MOSFET. DHS035N88E Datasheet

 

DHS035N88E Datasheet and Replacement


   Type Designator: DHS035N88E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 175 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 102 nC
   tr ⓘ - Rise Time: 124 nS
   Cossⓘ - Output Capacitance: 1129 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: TO263
 

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DHS035N88E Datasheet (PDF)

 ..1. Size:975K  cn wxdh
dhs035n88 dhs035n88e dhs035n88i.pdf pdf_icon

DHS035N88E

DHS035N88/DHS035N88E/DHS035N88I175A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionV = 80VDSSThese N-channel enhancement mode power mosfets used2 Dadvanced splite gate trench technology design, providedR =3.6m(TO-220&262)DS(on)(TYP)excellent Rdson and low gate charge. Which accords withGthe RoHS standard.R = 3.3m(TO-263)DS(on) (TYP)13 SI =175AD

 7.1. Size:988K  cn wxdh
dhs035n10 dhs035n10e.pdf pdf_icon

DHS035N88E

DHS035N10&DHS035N10E180A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFETV = 100VDSSutilizes advanced Split Gate Trench technology, which 2 Dprovides excellent Rdson and low Gate charge at the sameR = 3.2mTO-220DS(on) (TYP)time. Which accords with the RoHS standard.G1R = 3.0mTO-263DS(on) (TYP)3 S

 9.1. Size:775K  cn wxdh
dhs031n07p.pdf pdf_icon

DHS035N88E

DHS031N07P100A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 Dadvanced splite gate trench technology design, providedV =68VDSSexcellent Rdson and low gate charge. Which accords withGR =2.9mDS(on) (TYP)the RoHS standard.13 SI Silicon limit= 150AD2 FeaturesIPackage limit 100A= Fas

 9.2. Size:1016K  cn wxdh
dhs030n88 dhs030n88f dhs030n88i dhs030n88e.pdf pdf_icon

DHS035N88E

DHS030N88/DHS030N88F/DHS030N88I/DHS030N88E174A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.0mDS(on) (TYP)the RoHS standard.13 SI = 174AD2 Features Fast switching

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: OSG95R750FF | TPB65R750C | RU75N08 | DHS045N98F

Keywords - DHS035N88E MOSFET datasheet

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