DHS035N88E - параметры транзистора MOSFET, его аналоги, datasheet

DHS035N88E Datasheet (PDF)

..1. Size:975K cn wxdh
dhs035n88 dhs035n88e dhs035n88i.pdf pdf_icon

DHS035N88/DHS035N88E/DHS035N88I175A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionV = 80VDSSThese N-channel enhancement mode power mosfets used2 Dadvanced splite gate trench technology design, providedR =3.6m(TO-220&262)DS(on)(TYP)excellent Rdson and low gate charge. Which accords withGthe RoHS standard.R = 3.3m(TO-263)DS(on) (TYP)13 SI =175AD

7.1. Size:988K cn wxdh
dhs035n10 dhs035n10e.pdf pdf_icon

DHS035N10&DHS035N10E180A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFETV = 100VDSSutilizes advanced Split Gate Trench technology, which 2 Dprovides excellent Rdson and low Gate charge at the sameR = 3.2mTO-220DS(on) (TYP)time. Which accords with the RoHS standard.G1R = 3.0mTO-263DS(on) (TYP)3 S

9.1. Size:775K cn wxdh
dhs031n07p.pdf pdf_icon

DHS031N07P100A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 Dadvanced splite gate trench technology design, providedV =68VDSSexcellent Rdson and low gate charge. Which accords withGR =2.9mDS(on) (TYP)the RoHS standard.13 SI Silicon limit= 150AD2 FeaturesIPackage limit 100A= Fas

9.2. Size:1016K cn wxdh
dhs030n88 dhs030n88f dhs030n88i dhs030n88e.pdf pdf_icon

DHS030N88/DHS030N88F/DHS030N88I/DHS030N88E174A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.0mDS(on) (TYP)the RoHS standard.13 SI = 174AD2 Features Fast switching

Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .