DHS035N88E datasheet, аналоги, основные параметры

Наименование производителя: DHS035N88E  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 167 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 175 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 124 ns

Cossⓘ - Выходная емкость: 1129 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0039 Ohm

Тип корпуса: TO263

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Аналог (замена) для DHS035N88E

- подборⓘ MOSFET транзистора по параметрам

 

DHS035N88E даташит

 ..1. Size:975K  cn wxdh
 dhs035n88 dhs035n88e dhs035n88i.pdf pdf_icon

DHS035N88E

DHS035N88/DHS035N88E/DHS035N88I 175A 80V N-channel Enhancement Mode Power MOSFET 1 Description V = 80V DSS These N-channel enhancement mode power mosfets used 2 D advanced splite gate trench technology design, provided R =3.6m (TO-220&262) DS(on)(TYP) excellent Rdson and low gate charge. Which accords with G the RoHS standard. R = 3.3m (TO-263) DS(on) (TYP) 1 3 S I =175A D

 7.1. Size:988K  cn wxdh
 dhs035n10 dhs035n10e.pdf pdf_icon

DHS035N88E

DHS035N10&DHS035N10E 180A 100V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET V = 100V DSS utilizes advanced Split Gate Trench technology, which 2 D provides excellent Rdson and low Gate charge at the same R = 3.2m TO-220 DS(on) (TYP) time. Which accords with the RoHS standard. G 1 R = 3.0m TO-263 DS(on) (TYP) 3 S

 9.1. Size:775K  cn wxdh
 dhs031n07p.pdf pdf_icon

DHS035N88E

DHS031N07P 100A 68V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D advanced splite gate trench technology design, provided V =68V DSS excellent Rdson and low gate charge. Which accords with G R =2.9m DS(on) (TYP) the RoHS standard. 1 3 S I Silicon limit = 150A D 2 Features I Package limit 100A = Fas

 9.2. Size:1016K  cn wxdh
 dhs030n88 dhs030n88f dhs030n88i dhs030n88e.pdf pdf_icon

DHS035N88E

DHS030N88/DHS030N88F/ DHS030N88I/DHS030N88E 174A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.0m DS(on) (TYP) the RoHS standard. 1 3 S I = 174A D 2 Features Fast switching

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... DSU035N10N3A, DSU035N14N3, DTD080N07N, DTE025N04NA, DHS031N07P, DHS035N10, DHS035N10E, DHS035N88, IRFP250N, DHS035N88I, DHS045N88D, DHS045N88E, DHS045N88F, DHS045N88I, DHS045N98, DHS045N98B, DHS045N98D