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DHS035N88I Spec and Replacement


   Type Designator: DHS035N88I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 175 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 124 nS
   Cossⓘ - Output Capacitance: 1129 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO262

 DHS035N88I Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DHS035N88I Specs

 ..1. Size:975K  cn wxdh
 dhs035n88 dhs035n88e dhs035n88i.pdf pdf_icon

DHS035N88I

DHS035N88/DHS035N88E/DHS035N88I 175A 80V N-channel Enhancement Mode Power MOSFET 1 Description V = 80V DSS These N-channel enhancement mode power mosfets used 2 D advanced splite gate trench technology design, provided R =3.6m (TO-220&262) DS(on)(TYP) excellent Rdson and low gate charge. Which accords with G the RoHS standard. R = 3.3m (TO-263) DS(on) (TYP) 1 3 S I =175A D ... See More ⇒

 7.1. Size:988K  cn wxdh
 dhs035n10 dhs035n10e.pdf pdf_icon

DHS035N88I

DHS035N10&DHS035N10E 180A 100V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET V = 100V DSS utilizes advanced Split Gate Trench technology, which 2 D provides excellent Rdson and low Gate charge at the same R = 3.2m TO-220 DS(on) (TYP) time. Which accords with the RoHS standard. G 1 R = 3.0m TO-263 DS(on) (TYP) 3 S ... See More ⇒

 9.1. Size:775K  cn wxdh
 dhs031n07p.pdf pdf_icon

DHS035N88I

DHS031N07P 100A 68V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D advanced splite gate trench technology design, provided V =68V DSS excellent Rdson and low gate charge. Which accords with G R =2.9m DS(on) (TYP) the RoHS standard. 1 3 S I Silicon limit = 150A D 2 Features I Package limit 100A = Fas... See More ⇒

 9.2. Size:1016K  cn wxdh
 dhs030n88 dhs030n88f dhs030n88i dhs030n88e.pdf pdf_icon

DHS035N88I

DHS030N88/DHS030N88F/ DHS030N88I/DHS030N88E 174A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.0m DS(on) (TYP) the RoHS standard. 1 3 S I = 174A D 2 Features Fast switching... See More ⇒

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Detailed specifications: DSU035N14N3 , DTD080N07N , DTE025N04NA , DHS031N07P , DHS035N10 , DHS035N10E , DHS035N88 , DHS035N88E , IRF9540 , DHS045N88D , DHS045N88E , DHS045N88F , DHS045N88I , DHS045N98 , DHS045N98B , DHS045N98D , DHS045N98E .

Keywords - DHS035N88I MOSFET specs

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