DHS045N98E Datasheet. Specs and Replacement
Type Designator: DHS045N98E 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 165 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 98 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 57 nC
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 1225 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO263
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DHS045N98E substitution
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DHS045N98E datasheet
dhs045n98 dhs045n98f dhs045n98i dhs045n98e dhs045n98b dhs045n98d.pdf
DHS045N98/DHS045N98F/DHS045N98I/ DHS045N98E/DHS045N98B/DHS045N98D 120A 98V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 98V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 5.1m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Featur... See More ⇒
dhs045n88 dhs045n88f dhs045n88i dhs045n88e dhs045n88b dhs045n88d.pdf
DHS045N88/DHS045N88F/DHS045N88I/ DHS045N88E/DHS045N88B/DHS045N88D 120A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.6m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Featur... See More ⇒
dhs045n85 dhs045n85f dhs045n85i dhs045n85e dhs045n85b dhs045n85d.pdf
DHS045N85/DHS045N85F/DHS045N85I/ DHS045N85E/DHS045N85B/DHS045N85D 120A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.7m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Featur... See More ⇒
dhs044n12 dhs044n12e.pdf
DHS044N12/DHS044N12E 160A 120V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V = 120V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.7m DS(on) (TYP) the RoHS standard. 1 3 S I = 160A D 2 Features Low on resistance Low gate charge... See More ⇒
Detailed specifications: DHS035N88I, DHS045N88D, DHS045N88E, DHS045N88F, DHS045N88I, DHS045N98, DHS045N98B, DHS045N98D, AO3401, DHS045N98F, DHS045N98I, DSG028N10NA, DSG030N10N3, DSG041N08NA, DSG045N14N, DSG047N08N3, DSG048N08N3
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