DHS045N98E - Даташиты. Аналоги. Основные параметры
Наименование производителя: DHS045N98E
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 165 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 98 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 17 ns
Cossⓘ - Выходная емкость: 1225 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
Тип корпуса: TO263
Аналог (замена) для DHS045N98E
DHS045N98E Datasheet (PDF)
dhs045n98 dhs045n98f dhs045n98i dhs045n98e dhs045n98b dhs045n98d.pdf

DHS045N98/DHS045N98F/DHS045N98I/DHS045N98E/DHS045N98B/DHS045N98D120A 98V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 98VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 5.1mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Featur
dhs045n88 dhs045n88f dhs045n88i dhs045n88e dhs045n88b dhs045n88d.pdf

DHS045N88/DHS045N88F/DHS045N88I/DHS045N88E/DHS045N88B/DHS045N88D120A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.6mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Featur
dhs045n85 dhs045n85f dhs045n85i dhs045n85e dhs045n85b dhs045n85d.pdf

DHS045N85/DHS045N85F/DHS045N85I/DHS045N85E/DHS045N85B/DHS045N85D120A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.7mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Featur
dhs044n12 dhs044n12e.pdf

DHS044N12/DHS044N12E160A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV = 120VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.7mDS(on) (TYP)the RoHS standard.13 SI = 160AD2 Features Low on resistance Low gate charge
Другие MOSFET... DHS035N88I , DHS045N88D , DHS045N88E , DHS045N88F , DHS045N88I , DHS045N98 , DHS045N98B , DHS045N98D , IRFP260 , DHS045N98F , DHS045N98I , DSG028N10NA , DSG030N10N3 , DSG041N08NA , DSG045N14N , DSG047N08N3 , DSG048N08N3 .
History: 25N10G-TF2-T | 2N60G-T60-K
History: 25N10G-TF2-T | 2N60G-T60-K



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