All MOSFET. FQU5N60C Datasheet

 

FQU5N60C MOSFET. Datasheet pdf. Equivalent

Type Designator: FQU5N60C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 49 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 2.8 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm

Package: TO251_IPAK

FQU5N60C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQU5N60C Datasheet (PDF)

1.1. fqd5n60c fqu5n60c.pdf Size:636K _fairchild_semi

FQU5N60C
FQU5N60C

October 2008 QFET® FQD5N60C / FQU5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 600V, RDS(on) = 2.5? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especially tailored t

1.2. fqu5n60ctu.pdf Size:636K _fairchild_semi

FQU5N60C
FQU5N60C

October 2008 QFET® FQD5N60C / FQU5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.8A, 600V, RDS(on) = 2.5Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.5 pF) This advanced technology has been especia

 5.1. fqu5n50tu.pdf Size:768K _fairchild_semi

FQU5N60C
FQU5N60C

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.5A, 500V, RDS(on) = 1.8Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 8.5 pF) This advanced technology

5.2. fqu5n40tu.pdf Size:730K _fairchild_semi

FQU5N60C
FQU5N60C

April 2000 TM QFET QFET QFET QFET FQD5N40 / FQU5N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.4A, 400V, RDS(on) = 1.6Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.0 pF) This advanced technology

 5.3. fqd5n30 fqu5n30.pdf Size:757K _fairchild_semi

FQU5N60C
FQU5N60C

May 2000 TM QFET QFET QFET QFET FQD5N30 / FQU5N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.4A, 300V, RDS(on) = 0.9? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 9.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.5 pF) This advanced technology has been espec

5.4. fqd5n20 fqu5n20.pdf Size:695K _fairchild_semi

FQU5N60C
FQU5N60C

April 2000 TM QFET QFET QFET QFET FQD5N20 / FQU5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.8A, 200V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology has been esp

 5.5. fqd5n20l fqu5n20l.pdf Size:618K _fairchild_semi

FQU5N60C
FQU5N60C

October 2008 QFET® FQD5N20L / FQU5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.8A, 200V, RDS(on) = 1.2? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology is especially tailored t

5.6. fqu5n40 fqd5n40.pdf Size:735K _fairchild_semi

FQU5N60C
FQU5N60C

April 2000 TM QFET QFET QFET QFET FQD5N40 / FQU5N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 3.4A, 400V, RDS(on) = 1.6? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.0 pF) This advanced technology has been espe

5.7. fqu5n50ctu.pdf Size:664K _fairchild_semi

FQU5N60C
FQU5N60C

October 2008 QFET® FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.0A, 500V, RDS(on) = 1.4 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially

5.8. fqd5n50c fqu5n50c.pdf Size:664K _fairchild_semi

FQU5N60C
FQU5N60C

October 2008 QFET® FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.0A, 500V, RDS(on) = 1.4 ? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 18nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especially tailored to

Datasheet: FQU2N100 , FQU2N60C , FDMC8030 , FQU2N90TU_AM002 , FQU3N50C , FQU4N50TU_WS , FQU5N40 , FDMC7582 , IRF830 , FDMQ8403 , FQU5P20 , FQU8P10 , FQU9N25 , HUF75542P3 , HUF75631S3S , FDB86135 , HUF75639S3 .

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