FQU5N60C PDF Specs and Replacement
Type Designator: FQU5N60C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 49 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO251 IPAK
FQU5N60C substitution
FQU5N60C PDF Specs
fqd5n60ctf fqd5n60ctm fqd5n60c fqu5n60c fqu5n60ctu.pdf
October 2008 QFET FQD5N60C / FQU5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especia... See More ⇒
fqd5n60c fqu5n60c.pdf
FQD5N60C / FQU5N60C N-Channel QFET MOSFET 600 V, 2.8 A, 2.5 Features Description 2.8 A, 600 V, RDS(on) = 2.5 (Max.) @ VGS = 10 V, ID = 1.4 A This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar Low Gate Charge ( Typ. 15 nC) stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 6.5 pF) technology has bee... See More ⇒
fqd5n20 fqu5n20.pdf
April 2000 TM QFET QFET QFET QFET FQD5N20 / FQU5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology... See More ⇒
fqd5n40tf fqd5n40tm fqu5n40tu.pdf
April 2000 TM QFET QFET QFET QFET FQD5N40 / FQU5N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.4A, 400V, RDS(on) = 1.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 7.0 pF) This advanced technology ... See More ⇒
Detailed specifications: FQU2N100 , FQU2N60C , FDMC8030 , FQU2N90TUAM002 , FQU3N50C , FQU4N50TUWS , FQU5N40 , FDMC7582 , 8205A , FDMQ8403 , FQU5P20 , FQU8P10 , FQU9N25 , HUF75542P3 , HUF75631S3S , FDB86135 , HUF75639S3 .
History: STH26N25
Keywords - FQU5N60C MOSFET specs
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FQU5N60C replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: STH26N25
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