FQU5N60C - описание и поиск аналогов

October 2008 QFET FQD5N60C / FQU5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.8A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15 nC) planar stripe, DMOS technology. Low Crss ( typical 6.5 pF) This advanced technology has been especia

FQD5N60C / FQU5N60C N-Channel QFET MOSFET 600 V, 2.8 A, 2.5 Features Description 2.8 A, 600 V, RDS(on) = 2.5 (Max.) @ VGS = 10 V, ID = 1.4 A This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar Low Gate Charge ( Typ. 15 nC) stripe and DMOS technology. This advanced MOSFET Low Crss (Typ. 6.5 pF) technology has bee

April 2000 TM QFET QFET QFET QFET FQD5N20 / FQU5N20 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology

April 2000 TM QFET QFET QFET QFET FQD5N40 / FQU5N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.4A, 400V, RDS(on) = 1.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 7.0 pF) This advanced technology

October 2008 QFET FQD5N20L / FQU5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.8A, 200V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.8 nC) planar stripe, DMOS technology. Low Crss ( typical 6.0 pF) This advanced technology is especia

October 2008 QFET FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.0A, 500V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 18nC) planar stripe, DMOS technology. Low Crss ( typical 15pF) This advanced technology has been especially

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.5A, 500V, RDS(on) = 1.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13 nC) planar stripe, DMOS technology. Low Crss ( typical 8.5 pF) This advanced technology

May 2000 TM QFET QFET QFET QFET FQD5N30 / FQU5N30 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.4A, 300V, RDS(on) = 0.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 9.8 nC) planar stripe, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology h

April 2000 TM QFET QFET QFET QFET FQD5N40 / FQU5N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.4A, 400V, RDS(on) = 1.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 7.0 pF) This advanced technology