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DSG047N08N3 Spec and Replacement


   Type Designator: DSG047N08N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 705 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO220

 DSG047N08N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DSG047N08N3 Specs

 ..1. Size:1084K  cn wxdh
 dsg047n08n3 dse047n08n3.pdf pdf_icon

DSG047N08N3

DSG047N08N3&DSE047N08N3 120A 80V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced splite gate trench technology design, provided R = 3.9m T0-220 DS(on) (TYP) excellent Rdson and low gate charge. Which accords with G the RoHS standard. R = 3.7m T0-263 DS(on) (TYP) 1 3 S I = 120A D 2 F... See More ⇒

 9.1. Size:1037K  cn wxdh
 dse043n14n dsg045n14n.pdf pdf_icon

DSG047N08N3

DSE043N14N&DSG045N14N 180A 135V N-channel Enhancement Mode Power MOSFET 1 Description 2 D V =135V DSS This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which R =3.7m TO-263 DS(on) (TYP) G provides excellent Rdson and low Gate charge at the same 1 R =3.9m TO-220 DS(on) (TYP) time. Which accords with the RoHS standard. 3 S I... See More ⇒

 9.2. Size:835K  cn wxdh
 dsg048n08n3.pdf pdf_icon

DSG047N08N3

DSG048N08N3 120A 85V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.1m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Features Fast switching Low on resistance Low g... See More ⇒

 9.3. Size:901K  cn wxdh
 dsg041n08na.pdf pdf_icon

DSG047N08N3

DSG041N08NA 180A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.4m DS(on) (TYP) the RoHS standard. 1 3 S I = 180A D 2 Features Fast switching Low on resistance Low g... See More ⇒

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Detailed specifications: DHS045N98D , DHS045N98E , DHS045N98F , DHS045N98I , DSG028N10NA , DSG030N10N3 , DSG041N08NA , DSG045N14N , 13N50 , DSG048N08N3 , DSG052N14N , DSG053N08N3 , DSG054N10N3 , DSG059N15NA , DSG070N10L3 , DSG070N15NA , DSG108N20NA .

Keywords - DSG047N08N3 MOSFET specs

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