DSG047N08N3 - параметры транзистора MOSFET, его аналоги, datasheet

DSG047N08N3 Datasheet (PDF)

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DSG047N08N3&DSE047N08N3120A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced splite gate trench technology design, providedR = 3.9mT0-220DS(on) (TYP)excellent Rdson and low gate charge. Which accords withGthe RoHS standard. R = 3.7mT0-263DS(on) (TYP)13 SI = 120AD2 F

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DSE043N14N&DSG045N14N180A 135V N-channel Enhancement Mode Power MOSFET1 Description2 D V =135VDSSThis N-channel enhancement mode power MOSFETutilizes advanced Split Gate Trench technology, whichR =3.7mTO-263DS(on) (TYP)Gprovides excellent Rdson and low Gate charge at the same1R =3.9mTO-220DS(on) (TYP)time. Which accords with the RoHS standard.3 SI

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DSG048N08N3120A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.1mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Features Fast switching Low on resistance Low g

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DSG041N08NA180A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.4mDS(on) (TYP)the RoHS standard.13 SI = 180AD2 Features Fast switching Low on resistance Low g

Другие MOSFET... DHS045N98D , DHS045N98E , DHS045N98F , DHS045N98I , DSG028N10NA , DSG030N10N3 , DSG041N08NA , DSG045N14N , TK10A60D , DSG048N08N3 , DSG052N14N , DSG053N08N3 , DSG054N10N3 , DSG059N15NA , DSG070N10L3 , DSG070N15NA , DSG108N20NA .