DSG048N08N3 MOSFET PDF: N-Ch, 85V, 120A. Datasheet. Full specification with pinout and replacement list

DSG048N08N3 Specs and Replacement

   Type Designator: DSG048N08N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 639 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: TO220C

DSG048N08N3 substitution

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DSG048N08N3 datasheet

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DSG048N08N3 120A 85V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.1m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Features Fast switching Low on resistance Low g... See More ⇒

9.1. Size:1084K cn wxdh
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DSG047N08N3&DSE047N08N3 120A 80V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power mosfets used 2 D V = 80V DSS advanced splite gate trench technology design, provided R = 3.9m T0-220 DS(on) (TYP) excellent Rdson and low gate charge. Which accords with G the RoHS standard. R = 3.7m T0-263 DS(on) (TYP) 1 3 S I = 120A D 2 F... See More ⇒

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DSE043N14N&DSG045N14N 180A 135V N-channel Enhancement Mode Power MOSFET 1 Description 2 D V =135V DSS This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which R =3.7m TO-263 DS(on) (TYP) G provides excellent Rdson and low Gate charge at the same 1 R =3.9m TO-220 DS(on) (TYP) time. Which accords with the RoHS standard. 3 S I... See More ⇒

9.3. Size:901K cn wxdh
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DSG041N08NA 180A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.4m DS(on) (TYP) the RoHS standard. 1 3 S I = 180A D 2 Features Fast switching Low on resistance Low g... See More ⇒

Detailed specifications: DHS045N98E , DHS045N98F , DHS045N98I , DSG028N10NA , DSG030N10N3 , DSG041N08NA , DSG045N14N , DSG047N08N3 , AON7410 , DSG052N14N , DSG053N08N3 , DSG054N10N3 , DSG059N15NA , DSG070N10L3 , DSG070N15NA , DSG108N20NA , DSG140N12N3 .