DSG070N15NA Datasheet. Specs and Replacement
Type Designator: DSG070N15NA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 140 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 598 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO220
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DSG070N15NA substitution
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DSG070N15NA datasheet
dsg070n15na.pdf
DSG070N15NA 140A 150V N-channel Enhancement Mode Power MOSFET 1 Description 2 D V =150V DSS This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which G R = 5.9m DS(on) (TYP) provides excellent Rdson and low Gate charge at the same 1 time. Which accords with the RoHS standard. 3 S I = 140A D 2 Features Low on resistance Low ga... See More ⇒
dsg070n10l3.pdf
DSG070N10L3 100V/5.9m /100A N-MOSFET Features Key Parameters Low on resistance VDS 100V Low reverse transfer capacitances RDS(on)typ. 5.9m 100% single pulse avalanche energy test ID 100A 100% VDS test Vth 1.7V Pb-Free plating / Halogen-Free / RoHS compliant Ciss@10V 2690pF Qgd 12nC Applications Motor Control and Drive Charge/Discharge for Battery Mana... See More ⇒
Detailed specifications: DSG045N14N, DSG047N08N3, DSG048N08N3, DSG052N14N, DSG053N08N3, DSG054N10N3, DSG059N15NA, DSG070N10L3, IRF530, DSG108N20NA, DSG140N12N3, DSG270N12N3, DSN108N20N, DHS025N88E, DHS025N88F, DHS025N88I, DHS030N88
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