DHS051N10P Spec and Replacement
Type Designator: DHS051N10P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 108 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 611 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: DFN5X6-8L
DHS051N10P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DHS051N10P Specs
dhs051n10p.pdf
DHS051N10P 108A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.0m DS(on) (TYP) G 1 standard. I = 108A 3 S D 2 Features Fast switching Low on resistance Low gate ch... See More ⇒
dhs052n10 dhs052n10f dhs052n10i dhs052n10e dhs052n10b dhs052n10d.pdf
DHS052N10/DHS052N10F/DHS052N10I DHS052N10E/DHS052N10B/DHS052N10D 110A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 5.1m DS(on) (TYP) the RoHS standard. 1 3 S I = 110A D 2 Featu... See More ⇒
dhs052n10p.pdf
DHS052N10P 99A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 5.2m DS(on) (TYP) the RoHS standard. 1 3 S I = 99A D 2 Features Fast switching Low on resistance Low g... See More ⇒
dhs055n07b dhs055n07d.pdf
DHS055N07B/DHS055N07D 95A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided V =68V 2 D DSS excellent Rdson and low gate charge. Which accords with R = 6.0m DS(on) (TYP) the RoHS standard. G 1 I = 95A D 3 S 2 Features Fast switching Low on resistance ... See More ⇒
Detailed specifications: DHS030N88F , DHS030N88I , DHS046N10 , DHS046N10B , DHS046N10D , DHS046N10E , DHS046N10F , DHS046N10I , 18N50 , DHS052N10 , DHS052N10B , DSE026N10N3A , DSE026N10NA , DSE028N10N3 , DSE043N14N , DSE047N08N3 , DSE050N14N .
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