All MOSFET. DHS051N10P Datasheet

 

DHS051N10P Datasheet and Replacement


   Type Designator: DHS051N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 108 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 611 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: DFN5X6-8L
 

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DHS051N10P Datasheet (PDF)

 ..1. Size:769K  cn wxdh
 dhs051n10p.pdf pdf_icon

DHS051N10P

DHS051N10P108A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced Splite gate technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5.0mDS(on) (TYP)G1standard.I = 108A3 S D2 Features Fast switching Low on resistance Low gate ch

 9.1. Size:1375K  cn wxdh
 dhs052n10 dhs052n10f dhs052n10i dhs052n10e dhs052n10b dhs052n10d.pdf pdf_icon

DHS051N10P

DHS052N10/DHS052N10F/DHS052N10IDHS052N10E/DHS052N10B/DHS052N10D110A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 5.1mDS(on) (TYP)the RoHS standard.13 SI = 110AD2 Featu

 9.2. Size:777K  cn wxdh
 dhs052n10p.pdf pdf_icon

DHS051N10P

DHS052N10P99A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 5.2mDS(on) (TYP)the RoHS standard.13 SI = 99AD2 Features Fast switching Low on resistance Low g

 9.3. Size:875K  cn wxdh
 dhs055n07b dhs055n07d.pdf pdf_icon

DHS051N10P

DHS055N07B/DHS055N07D95A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedadvanced splite gate trench technology design, provided V =68V2 D DSSexcellent Rdson and low gate charge. Which accords withR = 6.0mDS(on) (TYP)the RoHS standard.G1I = 95AD3 S2 Features Fast switching Low on resistance

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History: DHS046N10F

Keywords - DHS051N10P MOSFET datasheet

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