DHS051N10P - описание и поиск аналогов

 

Аналоги DHS051N10P. Основные параметры


   Наименование производителя: DHS051N10P
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 180 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 108 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 32 ns
   Cossⓘ - Выходная емкость: 611 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0065 Ohm
   Тип корпуса: DFN5X6-8L
 

 Аналог (замена) для DHS051N10P

   - подбор ⓘ MOSFET транзистора по параметрам

 

DHS051N10P даташит

 ..1. Size:769K  cn wxdh
 dhs051n10p.pdf pdf_icon

DHS051N10P

DHS051N10P 108A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.0m DS(on) (TYP) G 1 standard. I = 108A 3 S D 2 Features Fast switching Low on resistance Low gate ch

 9.1. Size:1375K  cn wxdh
 dhs052n10 dhs052n10f dhs052n10i dhs052n10e dhs052n10b dhs052n10d.pdf pdf_icon

DHS051N10P

DHS052N10/DHS052N10F/DHS052N10I DHS052N10E/DHS052N10B/DHS052N10D 110A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 5.1m DS(on) (TYP) the RoHS standard. 1 3 S I = 110A D 2 Featu

 9.2. Size:777K  cn wxdh
 dhs052n10p.pdf pdf_icon

DHS051N10P

DHS052N10P 99A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 5.2m DS(on) (TYP) the RoHS standard. 1 3 S I = 99A D 2 Features Fast switching Low on resistance Low g

 9.3. Size:875K  cn wxdh
 dhs055n07b dhs055n07d.pdf pdf_icon

DHS051N10P

DHS055N07B/DHS055N07D 95A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided V =68V 2 D DSS excellent Rdson and low gate charge. Which accords with R = 6.0m DS(on) (TYP) the RoHS standard. G 1 I = 95A D 3 S 2 Features Fast switching Low on resistance

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... DHS030N88F , DHS030N88I , DHS046N10 , DHS046N10B , DHS046N10D , DHS046N10E , DHS046N10F , DHS046N10I , 18N50 , DHS052N10 , DHS052N10B , DSE026N10N3A , DSE026N10NA , DSE028N10N3 , DSE043N14N , DSE047N08N3 , DSE050N14N .

History: OSS60R190PF | IXTY1R6N50D2 | APG130N06P

 

 
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