DHS052N10 MOSFET Datasheet: N-Ch, 100V, 110A. Full specification with pinout and replacement list

DHS052N10 Specs and Replacement

Type Designator: DHS052N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 163 nS

Cossⓘ - Output Capacitance: 600 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm

Package: TO220

DHS052N10 substitution

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DHS052N10 datasheet

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dhs052n10 dhs052n10f dhs052n10i dhs052n10e dhs052n10b dhs052n10d.pdf pdf_icon

DHS052N10/DHS052N10F/DHS052N10I DHS052N10E/DHS052N10B/DHS052N10D 110A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 5.1m DS(on) (TYP) the RoHS standard. 1 3 S I = 110A D 2 Featu... See More ⇒

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DHS052N10P 99A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 5.2m DS(on) (TYP) the RoHS standard. 1 3 S I = 99A D 2 Features Fast switching Low on resistance Low g... See More ⇒

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DHS051N10P 108A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.0m DS(on) (TYP) G 1 standard. I = 108A 3 S D 2 Features Fast switching Low on resistance Low gate ch... See More ⇒

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DHS055N07B/DHS055N07D 95A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided V =68V 2 D DSS excellent Rdson and low gate charge. Which accords with R = 6.0m DS(on) (TYP) the RoHS standard. G 1 I = 95A D 3 S 2 Features Fast switching Low on resistance ... See More ⇒