All MOSFET. DSE058N15NA Datasheet

 

DSE058N15NA Datasheet and Replacement


   Type Designator: DSE058N15NA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 112 nC
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 611 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TO263
 

 DSE058N15NA substitution

   - MOSFET ⓘ Cross-Reference Search

 

DSE058N15NA Datasheet (PDF)

 ..1. Size:928K  cn wxdh
dse058n15na.pdf pdf_icon

DSE058N15NA

DSE058N15NA150A 150V N-channel Enhancement Mode Power MOSFET1 Description2 DV =150VDSSThese N-channel enhancement mode power MOSFETutilizes advanced Split Gate Trench technology, whichG R = 5.0mDS(on) (TYP)provides excellent Rdson and low Gate charge at the same1time. Which accords with the RoHS standard.3 S I = 150AD2 Features Low on resistance Low gat

 9.1. Size:1000K  cn wxdh
dsg053n08n3 dse051n08n3.pdf pdf_icon

DSE058N15NA

DSG053N08N3&DSE051N08N3120A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced splite gate trench technology design, providedR = 4.8mT0-220DS(on) (TYP)excellent Rdson and low gate charge. Which accords withGthe RoHS standard. R = 4.4mT0-263DS(on) (TYP)13 SI = 120AD2 F

 9.2. Size:1388K  cn wxdh
dse054n10n3 dsg054n10n3.pdf pdf_icon

DSE058N15NA

DSE054N10N3&DSG054N10N3 100V/4.6m/140A N-MOSFET Features Key ParametersVDS Low on resistance 100VRDS(on)typ.TO-263 Low reverse transfer capacitances 4.6mRDS(on)typ.TO-220 100% single pulse avalanche energy test 4.8mID 100% VDS test 140A Pb-Free plating / Halogen-Free / RoHS compliant Vth 3VCiss@10V4912pFQgd 16nCApplications M

 9.3. Size:1036K  cn wxdh
dsg052n14n dse050n14n.pdf pdf_icon

DSE058N15NA

DSG052N14N/DSE050N14N180A 135V N-channel Enhancement Mode Power MOSFET1 Description2 D V =135VDSSThis N-channel enhancement mode power MOSFETutilizes advanced Split Gate Trench technology, whichR =3.7mTO-263DS(on) (TYP)Gprovides excellent Rdson and low Gate charge at the same1R =3.9mTO-220DS(on) (TYP)time. Which accords with the RoHS standard.3 SI

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: PTA22N60 | IPP60R180C7

Keywords - DSE058N15NA MOSFET datasheet

 DSE058N15NA cross reference
 DSE058N15NA equivalent finder
 DSE058N15NA lookup
 DSE058N15NA substitution
 DSE058N15NA replacement

 

 
Back to Top

 


 
.