FQU9N25 PDF and Equivalents Search

 

FQU9N25 Specs and Replacement

Type Designator: FQU9N25

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm

Package: TO251 IPAK

FQU9N25 substitution

- MOSFET ⓘ Cross-Reference Search

 

FQU9N25 datasheet

 ..1. Size:562K  fairchild semi
 fqd9n25tf fqd9n25tm fqd9n25 fqu9n25 fqu9n25tu.pdf pdf_icon

FQU9N25

May 2000 TM QFET QFET QFET QFET FQD9N25 / FQU9N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7.4A, 250V, RDS(on) = 0.42 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 15.5 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology ... See More ⇒

 ..2. Size:905K  onsemi
 fqd9n25 fqu9n25.pdf pdf_icon

FQU9N25

FQD9N25 / FQU9N25 N-Channel QFET MOSFET 250 V, .4 A, Features 7.4 A, 250 V, RDS(on) = 420 m (Max.) @VGS = 10 V, ID = 3.7 A Description Low Gate Charge (Typ. 15.5 nC) This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary Low Crss (Typ. 15 pF) planar stripe and DMOS technology. This advanced MOSFET technology has... See More ⇒

Detailed specifications: FQU3N50C, FQU4N50TUWS, FQU5N40, FDMC7582, FQU5N60C, FDMQ8403, FQU5P20, FQU8P10, IRF9540, HUF75542P3, HUF75631S3S, FDB86135, HUF75639S3, FDD86252, HUF75842P3, HUF75852G3, HUFA75307T3ST

Keywords - FQU9N25 MOSFET specs

 FQU9N25 cross reference

 FQU9N25 equivalent finder

 FQU9N25 pdf lookup

 FQU9N25 substitution

 FQU9N25 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

↑ Back to Top
.