FQU9N25 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQU9N25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 55 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 7.4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 15.5 nC
Maximum Drain-Source On-State Resistance (Rds): 0.42 Ohm
Package: TO251_IPAK
FQU9N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQU9N25 Datasheet (PDF)
1.1. fqd9n25 fqu9n25.pdf 
Size:562K _fairchild_semi
May 2000 TM QFET QFET QFET QFET FQD9N25 / FQU9N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 7.4A, 250V, RDS(on) = 0.42? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 15.5 nC) planar stripe, DMOS technology. Low Crss ( typical 15 pF) This advanced technology has been espe
1.2. fqu9n25tu.pdf Size:562K _fairchild_semi
May 2000 TM QFET QFET QFET QFET FQD9N25 / FQU9N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 7.4A, 250V, RDS(on) = 0.42Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 15.5 nC) planar stripe, DMOS technology. • Low Crss ( typical 15 pF) This advanced technology
Datasheet: FQU3N50C , FQU4N50TU_WS , FQU5N40 , FDMC7582 , FQU5N60C , FDMQ8403 , FQU5P20 , FQU8P10 , STF5N52U , HUF75542P3 , HUF75631S3S , FDB86135 , HUF75639S3 , FDD86252 , HUF75842P3 , HUF75852G3 , HUFA75307T3ST .
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