All MOSFET. FQU9N25 Datasheet

 

FQU9N25 Datasheet and Replacement


   Type Designator: FQU9N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
   Package: TO251 IPAK
 

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FQU9N25 Datasheet (PDF)

 ..1. Size:562K  fairchild semi
 fqd9n25tf fqd9n25tm fqd9n25 fqu9n25 fqu9n25tu.pdf pdf_icon

FQU9N25

May 2000TMQFETQFETQFETQFETFQD9N25 / FQU9N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7.4A, 250V, RDS(on) = 0.42 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 15.5 nC)planar stripe, DMOS technology. Low Crss ( typical 15 pF)This advanced technology

 ..2. Size:905K  onsemi
 fqd9n25 fqu9n25.pdf pdf_icon

FQU9N25

FQD9N25 / FQU9N25N-Channel QFET MOSFET250 V, .4 A, Features 7.4 A, 250 V, RDS(on) = 420 m (Max.) @VGS = 10 V,ID = 3.7 ADescription Low Gate Charge (Typ. 15.5 nC)This N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary Low Crss (Typ. 15 pF)planar stripe and DMOS technology. This advanced MOSFET technology has

Datasheet: FQU3N50C , FQU4N50TUWS , FQU5N40 , FDMC7582 , FQU5N60C , FDMQ8403 , FQU5P20 , FQU8P10 , AO3400 , HUF75542P3 , HUF75631S3S , FDB86135 , HUF75639S3 , FDD86252 , HUF75842P3 , HUF75852G3 , HUFA75307T3ST .

History: AP2612GY-HF | FKV660S | IRC830PBF

Keywords - FQU9N25 MOSFET datasheet

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