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DSE140N12N3 Spec and Replacement


   Type Designator: DSE140N12N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 264 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO263

 DSE140N12N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DSE140N12N3 Specs

 ..1. Size:1506K  cn wxdh
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DSE140N12N3

DSG140N12N3&DSE140N12N3 120V/12m /70A N-MOSFET Features Key Parameters VDS Low on resistance 120V RDS(on)typ. Low reverse transfer capacitances 12m ID 100% single pulse avalanche energy test 70A Ciss@10V 100% VDS test 1901pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 4.7nC Applications Power switching applications DC-DC converters F... See More ⇒

Detailed specifications: DSE043N14N , DSE047N08N3 , DSE050N14N , DSE051N08N3 , DSE054N10N3 , DSE058N15NA , DSE065N10L3A , DSE108N20NA , 7N60 , DSE270N12N3 , DSG014N04N , DSG019N04L , DSG024N10N3 , DHS052N10D , DHS052N10E , DHS052N10F , DHS052N10I .

History: DHS052N10F

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