DSE270N12N3 Datasheet and Replacement
Type Designator: DSE270N12N3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 66 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 81 nS
Cossⓘ - Output Capacitance: 138 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO263
DSE270N12N3 substitution
DSE270N12N3 Datasheet (PDF)
dsg270n12n3 dse270n12n3.pdf

DSG270N12N3&DSE270N12N3120V/25m/36A N-MOSFETFeatures Key Parameters Low on resistance VDS 120V Low reverse transfer capacitances RDS(on)typ. 25m 100% single pulse avalanche energy test ID 36A 100% VDS test Ciss@10V 950pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 3.3nCApplications Power switching applications DC-DC converters Full bri
Datasheet: DSE047N08N3 , DSE050N14N , DSE051N08N3 , DSE054N10N3 , DSE058N15NA , DSE065N10L3A , DSE108N20NA , DSE140N12N3 , RU7088R , DSG014N04N , DSG019N04L , DSG024N10N3 , DHS052N10D , DHS052N10E , DHS052N10F , DHS052N10I , DHS052N10P .
History: IRF9362PBF | NCV8402
Keywords - DSE270N12N3 MOSFET datasheet
DSE270N12N3 cross reference
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History: IRF9362PBF | NCV8402



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