All MOSFET. DSG014N04N Datasheet

 

DSG014N04N Datasheet and Replacement


   Type Designator: DSG014N04N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 64 nS
   Cossⓘ - Output Capacitance: 5403 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
   Package: TO220
 

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DSG014N04N Datasheet (PDF)

 ..1. Size:1297K  cn wxdh
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DSG014N04N

DSG014N04N40V/1.3m/200A N-MOSFETFeatures Key Parameters Low on resistance VDS 40V Low reverse transfer capacitances RDS(on)typ. 1.3m 100% single pulse avalanche energy test ID (Silicon limit) 400A 100% VDS test ID (Package limit) 200A Pb-Free plating / Halogen-Free / RoHS compliant Vth 2.9VCiss@10V 9669pFApplications Qgd 11.5nC Motor Control and Drive

 9.1. Size:1665K  cn wxdh
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DSG014N04N

DSG019N04L 40V/1.6m/180A N-MOSFET Features Key Parameters Extremely low on-resistance RDS(on) VDS40VRDS(on)typ. Low reverse transfer capacitances 1.6mIDSilicon Limit 100% single pulse avalanche energy test 261AIDPackage Limit 100% VDS test 180A Pb-Free plating / Halogen-Free / RoHS compliant Vth 1.6VCiss@10V5275pFQgd 7.3nCApplicatio

Datasheet: DSE050N14N , DSE051N08N3 , DSE054N10N3 , DSE058N15NA , DSE065N10L3A , DSE108N20NA , DSE140N12N3 , DSE270N12N3 , STP65NF06 , DSG019N04L , DSG024N10N3 , DHS052N10D , DHS052N10E , DHS052N10F , DHS052N10I , DHS052N10P , DHS055N07 .

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