All MOSFET. HUF75631S3S Datasheet

 

HUF75631S3S Datasheet and Replacement


   Type Designator: HUF75631S3S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO263 D2PAK
 

 HUF75631S3S substitution

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HUF75631S3S Datasheet (PDF)

 ..1. Size:202K  fairchild semi
 huf75631s3s.pdf pdf_icon

HUF75631S3S

HUF75631P3, HUF75631S3STData Sheet December 200133A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCE DRAINDRAIN (FLANGE) Ultra Low On-ResistanceGATE- rDS(ON) = 0.040, VGS = 10VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE)- Spice an

 0.1. Size:200K  fairchild semi
 huf75631s3st.pdf pdf_icon

HUF75631S3S

HUF75631P3, HUF75631S3STData Sheet December 200133A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCE DRAINDRAIN (FLANGE) Ultra Low On-ResistanceGATE- rDS(ON) = 0.040, VGS = 10VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE)- Spice an

 5.1. Size:254K  fairchild semi
 huf75631sk8.pdf pdf_icon

HUF75631S3S

HUF75631SK8Data Sheet December 20015.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC MS-012AAFeaturesBRANDING DASH Ultra Low On-Resistance- rDS(ON) = 0.039, VGS = 10V5 Simulation Models1 - Temperature Compensated PSPICE and SABER 2Electrical Models34- Spice and SABER Thermal Impedance Models- www.fairchildsemi.comSymbol

 5.2. Size:249K  fairchild semi
 huf75631sk8t.pdf pdf_icon

HUF75631S3S

HUF75631SK8Data Sheet December 20015.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC MS-012AAFeaturesBRANDING DASH Ultra Low On-Resistance- rDS(ON) = 0.039, VGS = 10V5 Simulation Models1 - Temperature Compensated PSPICE and SABER 2Electrical Models34- Spice and SABER Thermal Impedance Models- www.fairchildsemi.comSymbol

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Datasheet: FQU5N40 , FDMC7582 , FQU5N60C , FDMQ8403 , FQU5P20 , FQU8P10 , FQU9N25 , HUF75542P3 , IRFP260 , FDB86135 , HUF75639S3 , FDD86252 , HUF75842P3 , HUF75852G3 , HUFA75307T3ST , HUFA75321D3S , HUFA75344S3 .

History: SCT2750NY | IRF7306QPBF

Keywords - HUF75631S3S MOSFET datasheet

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