All MOSFET. HUF75631S3S Datasheet

 

HUF75631S3S MOSFET. Datasheet pdf. Equivalent

Type Designator: HUF75631S3S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 120 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 33 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 66 nC

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: TO263_D2PAK

HUF75631S3S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HUF75631S3S Datasheet (PDF)

1.1. huf75631sk8t.pdf Size:249K _update_mosfet

HUF75631S3S
HUF75631S3S

 HUF75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS(ON) = 0.039Ω, VGS = 10V 5 • Simulation Models 1 - Temperature Compensated PSPICE® and SABER™ 2 Electrical Models 3 4 - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Symbol

1.2. huf75631s3st.pdf Size:200K _update_mosfet

HUF75631S3S
HUF75631S3S

HUF75631P3, HUF75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET® Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN (FLANGE) • Ultra Low On-Resistance GATE - rDS(ON) = 0.040Ω, VGS = 10V GATE • Simulation Models SOURCE - Temperature Compensated PSPICE® and SABER™ Electrical Models DRAIN (FLANGE) - Spice an

 1.3. huf75631sk8.pdf Size:254K _fairchild_semi

HUF75631S3S
HUF75631S3S

 HUF75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS(ON) = 0.039Ω, VGS = 10V 5 • Simulation Models 1 - Temperature Compensated PSPICE® and SABER™ 2 Electrical Models 3 4 - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Symbol

1.4. huf75631s3s.pdf Size:202K _fairchild_semi

HUF75631S3S
HUF75631S3S

HUF75631P3, HUF75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN (FLANGE) Ultra Low On-Resistance GATE - rDS(ON) = 0.040?, VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER Electrical Models DRAIN (FLANGE) - Spice and SABER Therm

Datasheet: FQU5N40 , FDMC7582 , FQU5N60C , FDMQ8403 , FQU5P20 , FQU8P10 , FQU9N25 , HUF75542P3 , IRFP064N , FDB86135 , HUF75639S3 , FDD86252 , HUF75842P3 , HUF75852G3 , HUFA75307T3ST , HUFA75321D3S , HUFA75344S3 .

 
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